Abstract:3D stacking of integrated circuits (ICs) provides significant advantages in saving device footprints, improving power management, and continuing performance enhancement, particularly for many-core systems. However, the stacked structure makes the heat dissipation a challenging issue. While Thermal Through Silicon Via (TTSV) is a promising way of lowering the thermal resistance of dies, past research has either overestimated or underestimated the effects of TTSVs as a consequence of the lack of detailed 3D IC models or system-level simulations. Here, we propose a simulation flow to accurately simulate TTSV effects on 3D ICs. We adopt benchmarks from Splash-2 running on a full-system mode of the gem5 simulator, which generates all the system component activities. McPAT is used to generate the corresponding power consumption and the power traces are fed to HotSpot for thermal simulation. The temperature profiles of 2D and 3D Nehalem-like ×86 processors are compared. TTSVs are later placed close to hotspot regions to facilitate heat dissipation; the peak temperature of 3D Nehalem is reduced by 5--25% with a small area overhead of 6%. By using a detailed 3D thermal model, full-system simulation, and a validated thermal simulator, our results show accurate thermal analysis of 3D ICs.

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Power Integrity Optimization of 3d Chips Stacked Through Tsvs

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

System-Level Analysis of 3D ICs with Thermal TSVs

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Silicon-Validated Power Delivery Modeling and Analysis on a 32-Nm DDR I/O Interface.

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

A Silicon-Validated Methodology for Power Delivery Modeling and Simulation

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Modeling and Characterization of On‐Chip Interconnects

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Capacitive coupling analysis of TSV array in 3D packaging

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Modeling and Impedance Analysis of Power Distribution Network in 3D ICs with TSVs

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Design and Analysis of Power Integrity in Deep Submicron System-on-Chip Circuits

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Method for system-level signal and power integrity modeling of high-speed electronic packages