Modeling and Characterization of On‐Chip Interconnects

wenyan yin,wensheng zhao
DOI: https://doi.org/10.1002/047134608X.W8196
2013-01-01
Abstract:Abstract: In this article, one distributed circuit model for the on-chip single interconnect will be introduced at first, where all the lumped elements are frequency-independent and can be directly obtained from its geometrical and physical parameters. This ensures proper scalability of the model parameters because no optimization tuning or fitting for them is involved. Some popular and low-cost techniques, such as patterned ground shield (PGS) structures for suppressing the substrate loss of silicon substrate at high frequencies and differential signal transmission are also addressed here. Then, electromagnetic modeling of on-chip coupled (a)symmetrical interconnects will be performed, including all distributed parameters. The average power handling capability (APHC) of on-chip interconnects and even thin-film microstrip lines (TFML) are also addressed here. Finally, the electrothermal analysis of multilevel interconnects under electrostatic discharge (ESD) stress will be reported using the time-domain FEM.
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