Power Integrity Optimization of 3d Chips Stacked Through Tsvs

Waqar Ahmad,Li-Rong Zheng,Roshan Weeraseker,Qiang Chen,Awet Yemane Weldezion,Hannu Tenhunen

DOI: https://doi.org/10.1109/epeps.2009.5338467

2009-01-01

Abstract:On-chip power distribution network model for simultaneous switching of 3D ICs stacked through TSVs to choose TSV pattern, maximum number of chips in a stack and location of the decoupling capacitor for early design trade-offs.

What problem does this paper attempt to address?

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Hui Min Lee,En-Xiao Liu,G. S. Samudra,Er-Ping Li

DOI: https://doi.org/10.1109/memc.0.7764251

2016-01-01

IEEE Electromagnetic Compatibility Magazine

Abstract:This paper presents power integrity modeling, measurement and analysis of a seven-chip stack for through-silicon via (TSV)-based 3D IC integration. A hybrid full-wave and circuit approach, combined with a cascaded scattering matrix technique, is proposed to model the multi-chip stack consisting of TSVs, on-chip power grids and on-chip decoupling capacitors. The hybrid approach leverages the accuracy of a full-wave approach and shorter computational time of a circuit approach. Modeling results show good correlation with measurement from 1.1 GHz to 20.1 GHz. Power integrity analysis is then performed on the seven-chip stack. To the best of our knowledge, this is the first power integrity modeling, measurement and analysis of seven-chip stack including on-chip decoupling capacitors.
Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Jing Jin,Wen-Sheng Zhao,Da-Wei Wang,Wen-Yan Yin

DOI: https://doi.org/10.1109/edaps.2017.8277009

2017-01-01

Abstract:The impacts of multi-walled carbon nanotube (MWCNT) through-silicon vias (TSVs) on the impedance characteristics of power delivery networks (PDNs) are investigated in this paper. The equivalent circuit model of the TSV array in the PDN is given and validated. On the basis of the circuit model, the impedance performances of stacked chip-PDNs based on MWCNT TSVs are evaluated and analyzed.
A Cross-Layer Approach for Early-Stage Power Grid Design and Optimization.

Cheng Zhuo,Houle Gan,Wei-Kai Shih,Alaeddin A. Aydiner

DOI: https://doi.org/10.1145/2700246

IF: 2.013

2015-01-01

ACM Journal on Emerging Technologies in Computing Systems

Abstract:Power integrity has become increasingly important for sub-32nm designs. Many prior works have discussed power grid design and optimization in the post-layout stage, when design change is inevitably expensive and difficult. In contrast, during the early stage of a development cycle, designers have more flexibility to improve the design quality. However, there are several fundamental challenges at early stage when the design database is not complete, including extraction, modeling, and optimization. This article tackles these fundamental issues of early-stage power grid design from architecture to layout. The proposed methods have been silicon validated on 32nm on-market chips and successfully applied to a 22nm design for its early-stage power grid design. The findings from such practices reveal that, for sub-32nm chips, an intrinsic on-die capacitance and power gate scheme may have more significant impact than expected on power integrity, and needs to be well addressed at early stage.
High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Na Li,Junfa Mao,Wen-Sheng Zhao,Min Tang,Wen-Yan Yin

DOI: https://doi.org/10.1109/tcpmt.2018.2853405

2018-01-01

IEEE Transactions on Components Packaging and Manufacturing Technology

Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.
Methods and designs for improving the signal integrity for 3D electrical interconnects in high performance IC packaging

Boping Wu,Haogang Wang

DOI: https://doi.org/10.1109/EDAPS.2011.6213775

2011-01-01

Abstract:Design of high performance package interconnects using full-wave electromagnetic solvers is necessary due to increased operation speed, miniaturization and vertical 3D integration. Thus the segmented study and optimization is becoming inevitable for designers to improve the signal integrity of IC packaging. This paper addresses alternative methods and optimal designs on several components and structures for package electrical interconnect, including voiding technique, padless via implementation, spiral micro-via stacking and signal/ground layout patterns. The simulated time domain results have been presented to demonstrate the improvements of optimized schemes. These methodologies could be treated as handy references and general guidelines applied to differential package line resulting in a significant improvement of overall package signal integrity performance.
TSV inductor optimization and its design implication

Cheng Zhuo,Baixin Chen

DOI: https://doi.org/10.1109/CSTIC.2017.7919899

2017-01-01

Abstract:Due to the relatively slow scaling of packaging technology, on chip inductor has shown promising potential to enable more compact design and smaller parasitics for inductor-central designs, such as voltage regulator, resonant clocking, filter, etc. However, conventional on-chip spiral inductor has to be placed on the top few metal layers, thereby consuming significant routing area for global interconnects. Moreover, it typically needs more dedicated shielding to prevent unnecessary coupling, and further increases its occupied area. With the popularity of 2.5D and 3D design architecture, TSVs have been widely used, a significant portion of which are dummy and placed for thermal/DFM/reliability purposes. Thus, TSV inductor has been proposed to utilize those dummy TSVs to form the on-chip inductor for 2.5D/3D designs, with different characteristics from the conventional spiral inductor. This paper first reviews the concept of TSV inductor, investigates its physics and then discusses the compact models to enable more efficient design and trade off. Based on that, we study its design impacts on signal integrity and application for filter designs.
System-Level Analysis of 3D ICs with Thermal TSVs

Ayed Alqahtani,Zongqing Ren,Jaeho Lee,Nader Bagherzadeh

DOI: https://doi.org/10.1145/3264736

IF: 2.013

2018-11-01

ACM Journal on Emerging Technologies in Computing Systems

Abstract:3D stacking of integrated circuits (ICs) provides significant advantages in saving device footprints, improving power management, and continuing performance enhancement, particularly for many-core systems. However, the stacked structure makes the heat dissipation a challenging issue. While Thermal Through Silicon Via (TTSV) is a promising way of lowering the thermal resistance of dies, past research has either overestimated or underestimated the effects of TTSVs as a consequence of the lack of detailed 3D IC models or system-level simulations. Here, we propose a simulation flow to accurately simulate TTSV effects on 3D ICs. We adopt benchmarks from Splash-2 running on a full-system mode of the gem5 simulator, which generates all the system component activities. McPAT is used to generate the corresponding power consumption and the power traces are fed to HotSpot for thermal simulation. The temperature profiles of 2D and 3D Nehalem-like ×86 processors are compared. TTSVs are later placed close to hotspot regions to facilitate heat dissipation; the peak temperature of 3D Nehalem is reduced by 5--25% with a small area overhead of 6%. By using a detailed 3D thermal model, full-system simulation, and a validated thermal simulator, our results show accurate thermal analysis of 3D ICs.

engineering, electrical & electronic,computer science, hardware & architecture,nanoscience & nanotechnology
Early-Stage Power Grid Design: Extraction, Modeling and Optimization

Cheng Zhuo,Houle Gan,Wei-Kai Shih

DOI: https://doi.org/10.1145/2593069.2593129

2014-01-01

Abstract:Many prior works have discussed the power grid design and optimization in the post-layout stage, when design change is inevitably expensive and difficult. In contrast, during the early stage of a development cycle, designers have more flexibility to improve the design quality. However, there are several fundamental challenges at early-stage when design database is NOT complete, including extraction, modeling and optimization. This paper tackles these fundamental issues of early-stage power grid design. The proposed methods have been silicon-validated on 32nm on-market chips and successfully applied to a 22nm design for its early stage power grid design. The findings from such practices reveal that, for sub-32nm chips, intrinsic on-die capacitance and power gate scheme may have more significant impact than expected on power integrity, and need to be well addressed at early stage.
Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Xing Chang Wei,Zaw,En-xiao Liu,Er-Ping Li

DOI: https://doi.org/10.1109/icmmt.2012.6229902

2012-01-01

Abstract:The power supply grids of integrated circuits (ICs) are interconnected through silicon vias (TSVs) to form a 3-D chip integration in vertical direction. The required currents for each functional device to operate in the ICs are supplied through power and ground TSV pairs and power distribution meshes. Accurate estimation of power/ground noises (static and dynamic drops) in a 3-D power distribution network is crucial for a robust power supply design in order to operate the devices functionally. With fast switching characteristics of the devices, the worst case power supply noise may not be analysed accurately. In this paper, we present a systematic approach to analyse the static and dynamic drop, as a function of switching time, in power supply grids of 3-D ICs. Furthermore the approach is extended to investigate noise sensitivity of TSVs and power supply grids with decoupling capacitors.
Power Distribution TSVs Induced Core Switching Noise

Waqar Ahmad,Rajeev Kumar Kanth,Qiang Chen,Li-Rong Zheng,Hannu Tenhunen

DOI: https://doi.org/10.1109/edaps.2010.5683008

2010-01-01

Abstract:Size of on-chip interconnects as well as the supply voltage is reducing with each technology node whereas the operating speed is increasing in modern VLSI design. Today, the package inductance and resistance has been reduced to such an extent that core switching noise caused by on-chip inductance and on-chip resistance is gaining importance as compared to I/O drivers switching noise. Both on-chip inductance and skin effect are prime players at frequencies of the order of GHz. The problem is further aggravated when chips are interconnected through TSVs to form a 3D integrated stack in order to achieve low form factor and high integration density. In this paper we analysed peak core switching noise in a 3D stack of integrated chips interconnected through power distribution TSV pairs, through our comprehensive mathematical model which has been proved to be quite accurate as compared to SPICE. We analysed the effect of number of chips in a 3D stack, rise time, decoupling capacitance, and skin effect on power distribution TSVs induced core switching noise in this paper.
Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Enxiao Liu,Huimin Lee,Xingchang Wei,Erping Li

DOI: https://doi.org/10.1109/EDAPS.2011.6213805

2011-01-01

Abstract:Through silicon vias (TSV) are critical vertical interconnects in 3D IC. We comparatively studied the signal integrity of different designs of TSVs both existing and new in a single die up to 20 GHz. For TSVs in multiple die stacking, we proposed to use the cascaded scattering matrix approach for their signal integrity analysis. The results are validated against those from full-path simulation. Compared to full-path simulation by a full-wave approach, the cascaded approach reduces simulation time and memory usage.
Power Delivery Design for 3-D ICs Using Different Through-Silicon Via (TSV) Technologies

Nauman H Khan,Syed M Alam,Soha Hassoun,Nauman H. Khan,Syed M. Alam

DOI: https://doi.org/10.1109/tvlsi.2009.2038165

2011-04-01

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Abstract:3-D integrated circuits promise high bandwidth, low latency, low device power, and a small form factor. Increased device density and asymmetrical packaging, however, renders the design of 3-D power delivery a challenge. We investigate in this paper various methods to improve 3-D power delivery. We analyze the impact of through-silicon via (TSV) size and spacing, of controlled collapse chip connection (C4) spacing, and of dedicated power delivery TSVs. In addition to considering typical cylindrical or square metal-filled TSVs (core TSVs), we also investigate using coaxial TSVs for power delivery resulting in reduced routing blockages and added coupling capacitance. Our 3-D evaluation system is composed of a quad-core chip multiprocessor, a memory die, and an accelerator engine, and it is evaluated using representative SPEC benchmark traces. This is the first detailed architectural-level analysis for 3-D power delivery. Our findings provide clear guidelines for 3-D power delivery design. More importantly, we show that it is possible to achieve 2-D-like, or even better, power quality by increasing C4 granularity and by selecting suitable TSV size and spacing.

engineering, electrical & electronic,computer science, hardware & architecture
Modeling and Impedance Analysis of Power Distribution Network in 3D ICs with TSVs

Wei Zhang,Zhaowen Yan,Chunyu Wu,Jianwei Wang

DOI: https://doi.org/10.1109/isemc.2017.8077888

2017-01-01

Abstract:This paper focuses on the modeling and analysis of different power distribution network (PDN) structures in 3D TSV ICs, including 3D full wave model and equivalent circuit model. In addition, a simplified equivalent circuit model of stacked PDN is proposed to analysis aspects influencing stacked PDN impedance, such as number of ground TSVs, number of TSV pairs and number of stacked layers. Analyses about how these aspects influencing total capacitance, inductance of stacked PDN and causing resonance in PDN self-impedance (Z 11 ) are made in detail. What's more, power noise in different stacked PDN structures is calculated and analyzed in time domain to evaluate their power integrity features. Analysis in this paper can offer instructions for the design and analysis of on-chip PDN.
Scheduling Tests for 3D Stacked Chips under Power Constraints

Breeta SenGupta,Urban Ingelsson,Erik Larsson

DOI: https://doi.org/10.1007/s10836-011-5244-5

2011-09-10

Journal of Electronic Testing

Abstract:This paper addresses Test Application Time (TAT) reduction under power constraints for core-based 3D Stacked ICs (SICs) connected by Through Silicon Vias (TSVs). Unlike non-stacked chips, where the test flow is well defined by applying the same test schedule both at wafer sort and at package test, the test flow for 3D TSV-SICs is yet undefined. In this paper we present a cost model to find the optimal test flow. For the optimal test flow, we propose test scheduling algorithms that take the particulars of 3D TSV-SICs into account. A key challenge in testing 3D TSV-SICs is to reduce the TAT by co-optimizing the wafer sort and the package test while meeting power constraints. We consider a system of chips with cores that are accessed through an on-chip JTAG infrastructure and propose a test scheduling approach to reduce TAT while considering resource conflicts and meeting the power constraints. Depending on the test schedule, the JTAG interconnect lines that are required can be shared to test several cores. This is taken into account in experiments with an implementation of the proposed scheduling approach. The results show significant savings in TAT.

engineering, electrical & electronic
Fast PCB Stack-Up Optimization Using Integer Programming

Jiayi He,Ling Zhang,Zurab Kiguradze,Arun Chada,Adam Klivans,Bhyrav Mutnury,Er-Ping Li,Jun Fan

DOI: https://doi.org/10.1109/tsipi.2023.3248539

2023-01-01

Abstract:This article presents a flexible and efficient methodology to optimize stack-up for multilayer printed circuit boards (PCBs) with enormous search space and various design constraints. PCB stack-up optimization is crucial in high-speed system design to achieve the desired electrical performance while reducing system costs. The stack-up optimization process is labor-intensive and time-consuming for a large number of layers. Moreover, after the optimization process, the electrical performance of a real design, such as the impedance and loss, may deviate from the target design due to manufacturing variations. Estimating the worst cases due to the manufacturing variations, referred to as “corner cases” in this article, is essential for a confident PCB design but challenging since the number of related parameters is large. In this article, PCB stack-up optimization and corner-case searching are addressed and greatly accelerated using the integer programming technique. All constraints are converted to mathematical equalities and inequalities that can be solved rapidly by an integer programming solver to obtain feasible stack-up solutions. After the cross sections of the transmission lines are optimized based on the stack-up design to achieve a target electrical performance, the upper and lower bound of impedance and loss are acquired using integer programming when the design parameters vary in a particular range. The proposed method is verified using multilayer PCB designs with practical constraints and demonstrates its effectiveness and high efficiency.
Modeling of Peak-to-peak Core Switching Noise, Output Impedance, and Decoupling Capacitance along a Vertical Chain of Power Distribution TSV Pairs

Waqar Ahmad,Qiang Chen,Li-Rong Zheng,Hannu Tenhunen

DOI: https://doi.org/10.1007/s10470-011-9797-0

IF: 1.321

2012-01-01

Analog Integrated Circuits and Signal Processing

Abstract:In this article we propose an efficient and accurate model to estimate peak-to-peak core switching noise, caused by simultaneous switching of logic loads along a vertical chain of power distribution TSV pairs in a 3D stack of dies interconnected through TSVs. The proposed model is accurate with only a 2–3% difference in peak-to-peak core switching noise as compared to the Ansoft Nexxim4.1 equivalent model. The proposed model is 3–4 times faster than Ansoft Nexxim4.1 and uses two times less memory as compared to the Ansoft Nexxim4.1 equivalent model. In this article we also thoroughly establish design guidelines for almost flat output impedance magnitude at each stage of a vertical chain of power distribution TSV pairs to realize a resonance free scenario over a wide operating frequency range. We also establish decoupling capacitance design guidelines based on the optimum output impedance and critically damped supply voltage for the core logic for each stage of a vertical chain of power distribution TSV pairs.
Efficient Region-Aware P/G TSV Planning for 3D ICs

Song Yao,Xiaoming Chen,Yu Wang,Yuchun Ma,Yuan Xie,Huazhong Yang

DOI: https://doi.org/10.1109/isqed.2014.6783321

2014-01-01

Abstract:Power delivery network (PDN) design is one of the most critical challenges in 3D Integrated Circuits (IC) design. In existing studies, to ensure the robustness of the 3D PDN, the number of TSVs was always increased inefficiently to mitigate the IR-drop and power noise. However, the overhead for connections is a crucial obstacle to the development of 3D ICs. Consequently, an efficient TSV topology is needed to reduce the overhead of TSVs while meeting the power supply requirements. The redundant TSVs may introduce more keep-out zones, decrease the core utilization of the chip, and lead to high cost. In this paper, we propose a region-aware TSV planning algorithm which can distribute TSV resources non-evenly over different areas according to their IR-drop constraints separately. This method can use fewer power TSVs to meet the power integrity constraint of the whole chip while guaranteeing the functionality. Furthermore, to ensure the practicability, we also take the whitespace into account. Experimental results show that, the proposed algorithm can save on average 42% and 27% power TSV resources without and with whitespace consideration respectively compared with the evenly TSV planning algorithm.
Hierarchical Simulation and Optimization of 3 D Power Delivery Network

Song Yao,Junior Undergraduate,Yu Wang,yu-wang

2014-01-01

Abstract:With the feature size shrinking, traditional electronic design methodologies face some bottlenecks such as per wafer cost, large interconnect delay, and high leakage power. Threedimensional integration circuit (3D IC) has been regarded as a promising solution to mitigate these problems. 3D ICs stack separate tiers in the vertical direction and connect them using vertical connections such as Through-Silicon-Vias (TSVs). Compared with traditional 2D integration, the 3D technology can provide many benefits such as reduction in the interconnect wire length, improvement of memory bandwidth, and support for realization of heterogeneous integration [1]. 3D power delivery network (PDN) is the basic support system for 3D ICs, which includes the power/ground (P/G) networks, the vertical interconnects, and the package (shown in Figure 1). In 3D PDNs, P/G TSVs connect the P/G networks in different tiers, and the bottommost tier is connected to the package through metal bumps and then routed to the voltage sources on the PCB board. The design of a 3D PDN is much more complex than the design of a 2D power network [2] and considered as one of the most critical challenges in IC design. As power coupling between different tiers becomes tighter and multiple tiers are stacked together into small footprints, delivering current to all parts of the 3D IC becomes highly challenging. An irrational PDN design may result in low supply voltage levels in the grid, i.e. large IR-drop, and thus increase the gate delay, lead to timing violations and harm the functionality of circuits [3]. To design a PDN, suitable simulation approaches are necessary. However, PDN analysis is usually a time and resource consuming task since there are millions of nodes in most mesh-based PDNs. The simulation problem becomes tougher in 3D cases as the network scale may be several times larger than that of 2D cases. Nevertheless, most existing studies tend to regard the 3D power system as a whole like a 2D power system, which does not utilize the inherent 3D structure and causes inefficiency. Considering that TSVs naturally form good partition boundaries, a hierarchical technique to analyze the 3D PDN regarding the power grid of each layer as a macro-model may lead to efficiency and offer an opportunity for further parallel speedup. Numerous studies spring up these years in the field of 3D PDN design. However, most studies tended to simply increase the number of TSVs to mitigate power supply problems. Since TSV fabrication causes tensile stress around TSVs and results in significant carrier mobility variation in the devices P/G TSV
Power Optimization for Application-Specific 3D Network-on-chip with Multiple Supply Voltages

Kan Wang,Sheqin Dong

DOI: https://doi.org/10.1109/aspdac.2013.6509622

2013-01-01

Abstract:In this paper, a MSV-driven power optimization method is proposed for application-specific 3D NoC (MSV-3DNoC). A unified modeling method is presented for considering both layer assignment and voltage assignment, which achieves the best trade-off between core power and communication power. A 3D NoC synthesis is proposed to assign network components onto each layer and generate inter-layer interconnection. A global redistribution is applied to further reduce communication power. Experimental results show that compared to MSV-driven 2D NoC, the proposed method can improve total chip power greatly.

Power Integrity Optimization of 3d Chips Stacked Through Tsvs

Power Integrity Modeling, Measurement and Analysis of Seven-Chip Stack for TSV-based 3D IC Integration

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

A Cross-Layer Approach for Early-Stage Power Grid Design and Optimization.

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Methods and designs for improving the signal integrity for 3D electrical interconnects in high performance IC packaging

TSV inductor optimization and its design implication

System-Level Analysis of 3D ICs with Thermal TSVs

Early-Stage Power Grid Design: Extraction, Modeling and Optimization

Power Integrity Analysis of TSV Based 3-D Integrated Circuits

Power Distribution TSVs Induced Core Switching Noise

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Power Delivery Design for 3-D ICs Using Different Through-Silicon Via (TSV) Technologies

Modeling and Impedance Analysis of Power Distribution Network in 3D ICs with TSVs

Scheduling Tests for 3D Stacked Chips under Power Constraints

Fast PCB Stack-Up Optimization Using Integer Programming

Modeling of Peak-to-peak Core Switching Noise, Output Impedance, and Decoupling Capacitance along a Vertical Chain of Power Distribution TSV Pairs

Efficient Region-Aware P/G TSV Planning for 3D ICs

Hierarchical Simulation and Optimization of 3 D Power Delivery Network

Power Optimization for Application-Specific 3D Network-on-chip with Multiple Supply Voltages