Abstract:A coupled electrical-thermal cosimulation with consideration of the temperature dependence of the metal-oxide-semiconductor (MOS) effect is performed for coaxial through silicon vias (C-TSVs) by using equivalent electrical and thermal circuit models. In the equivalent electrical circuit (EEC) model, the dependence of the MOS capacitance on bias voltage, operation frequency, oxide charge density, and temperature is studied, and further verified by measurement results from a previous publication. A 3-D equivalent thermal circuit (ETC) model with lump components, including thermal resistance and thermal capacitance analytically calculated from the geometry and material parameters of C-TSVs, is proposed for transient thermal simulation. The accuracy of the EEC and ETC models is verified by comparisons with full-wave simulations. Transient electrical-thermal co-simulation is performed for the C-TSVs with the EEC and ETC models. Results reveal that the temperature dependence of depletion width and corresponding MOS capacitance leads to considerable variations in the S-parameters of C-TSVs.

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

Electrothermal modelling of through silicon via (TSV) interconnects

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Wideband lumped element model for on-chip (a)symmetrical coupled interconnects on lossy silicon substrate

Quasi-Static Derived Physically Expressive Circuit Model for Lossy Integrated RF Passives

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Wideband Description of the Finite-Ground Coplanar Waveguide-Type Structures with Discontinuities

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

An Efficient Method for Comprehensive Modeling and Parasitic Extraction of Cylindrical Through-Silicon Vias in 3d Ics

Electrical-thermal Co-Analysis of Through Silicon Via with Equivalent Circuit Model

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon