Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Modeling of a Pair of Annular Through Silicon Vias (TSV)

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Capacitive coupling analysis of TSV array in 3D packaging

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Signal Integrity Analysis of Through-Silicon Via Based 3D Integrated Circuit

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Accurate Electrical Modeling of Through Silicon Via with Minority Carrier Redistribution Effect