Abstract:To support the recent progress in 3-D integration based on through-silicon via (TSV) technology, an improved electromagnetic modeling method for TSVs is presented. In the framework of the mixed-potential integral equations combined with cylindrical modal basis functions, the proposed method can extract the effects of depletion capacitances and a finite substrate. To include the effects of depletion region generated by an external dc bias voltage, an additional capacitive cell is employed around a TSV. The proposed method also considers the effect from the finite silicon substrate accurately by employing the multilayered Green’s functions. To reduce the computational cost for calculations involving Green’s functions, a method to approximate Green’s functions over localized intervals when computing partial potential coefficients is presented. The proposed method is validated for simple TSV examples and shows an improved accuracy with the acceptable usage of memory and simulation time. In addition, a $10 \times 10$ TSV array is modeled using different design parameters, showing the capability for dealing with larger size problems using this method.

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Influence of Electroplating Current Density on Through Silicon Via Filling

Electrothermal modelling of through silicon via (TSV) interconnects

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

A Shielding Structure for Crosstalk Reduction in Silicon Interposer

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Modeling of Through-Silicon Via (TSV) Interposer Considering Depletion Capacitance and Substrate Layer Thickness Effects

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Modeling and Measurement of A Novel Shielding Design in Silicon Interposer

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Double-Shielded Interposer with Highly Doped Layers for High-Speed Signal Propagation