Abstract:Impact caused by Through-Silicon Via (TSV) induced thermo-mechanical stress on device performance has been a concern for three-dimensional (3D) integrated circuit (IC) integration because of the close proximity of TSVs to semiconductor devices. From the literatures, there are conflicting reports between theory, simulated and experimental results. For realistic and reasonably accurate predictions, the stress build-up by taking the full CMOS process flow into consideration is simulated. We investigated various key factors such as the orientation of TSV to device, device channel length and different CMOS technologies on the impact of TSV induced thermo-mechanical stress on device performance. Results exhibit that TSV induced stress impacts more on long channel nMOSFETs typically used in analog applications than that on digital devices of minimum channel length for the same CMOS technology. This is mainly due to the decrease in the impact of tensile stress liner in the long channel nMOSFET. In addition, the impact of TSV induced stress on nMOSFET devices of the same channel length of 180 nm is found to be larger for 130 nm technology than 28 nm and 65 nm technologies, which resolves conflicts in past reports.

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Modeling of a Pair of Annular Through Silicon Vias (TSV)

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics

Carbon Nanotube Vias: A Reality Check

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Capacitive coupling analysis of TSV array in 3D packaging

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate