Abstract:A coupled electrical-thermal cosimulation with consideration of the temperature dependence of the metal-oxide-semiconductor (MOS) effect is performed for coaxial through silicon vias (C-TSVs) by using equivalent electrical and thermal circuit models. In the equivalent electrical circuit (EEC) model, the dependence of the MOS capacitance on bias voltage, operation frequency, oxide charge density, and temperature is studied, and further verified by measurement results from a previous publication. A 3-D equivalent thermal circuit (ETC) model with lump components, including thermal resistance and thermal capacitance analytically calculated from the geometry and material parameters of C-TSVs, is proposed for transient thermal simulation. The accuracy of the EEC and ETC models is verified by comparisons with full-wave simulations. Transient electrical-thermal co-simulation is performed for the C-TSVs with the EEC and ETC models. Results reveal that the temperature dependence of depletion width and corresponding MOS capacitance leads to considerable variations in the S-parameters of C-TSVs.

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Modeling and Characterization of Coaxial Through-Silicon Via with Electrically Floating Inner Silicon

Analysis of Transmission Characteristics of Copper/Carbon Nanotube Composite Through-Silicon Via Interconnects

Electrical Characterization of Coaxial Silicon–Insulator–Silicon Through-Silicon Vias: Theoretical Analysis and Experiments

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Research on Transmission Characteristics of Tapered Through Silicon Via in Signal Integrity

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix