Abstract:Electrothermal effects in various through silicon via (TSV) arrays are investigated in this paper. An equivalent lumped-element circuit model of a TSV pair is derived. The temperature-dependent TSV capacitance, silicon substrate capacitance and conductance are examined for low-, medium-, and high-resistivity silicon substrates, respectively. The partial-element equivalent-circuit (PEEC) method is employed for calculating per-unit-length (p.u.l.) resistance, inductance, insertion loss and characteristic impedances of copper and polycrystalline silicon (poly-Si) TSV arrays, and their frequency- and temperature-dependent characteristics are treated rigorously. The modified time-domain finite-element method (TD-FEM), in the presence of a set of periodic differential-mode voltage pulses, is also employed for studying transient electrothermal responses of 4- and 5-TSV arrays made of different materials, with their maximum temperatures and thermal crosstalk characterized thoroughly.

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Electrical Characterization of Coaxial Silicon–Insulator–Silicon Through-Silicon Vias: Theoretical Analysis and Experiments

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Modeling and Characterization of Coaxial Through-Silicon Via with Electrically Floating Inner Silicon

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures