Abstract:Through Silicon Vias (TSVs) are vulnerable to electromigration (EM) degradation due to their high local current densities, thereby reducing the reliability of 3D ICs with stack dies and TSVs. Due to the broad application of 3D ICs, it is necessary to analyze the electromigration reliability of TSVs. To overcome the weakness of traditional method for EM modeling of TSVs, we propose a physics-informed learning approach for transient analysis of electromigration modeling in TSV by solving the conventional mass balance equation. The proposed method allows simultaneous consideration of atomic depletion and accumulation, effective resistance degradation, electric current evolution and stress distribution. In particular, we propose a customized neural network to simulate the EM process in TSV without the need for fine grid meshing and temporal iteration in traditional methods. Considering that the loss function of the proposed model is a combination of different loss terms, we propose a modified self-adaptive loss balanced method to automatically adjust the weights of multiple loss terms to enhance network performance. Given the prediction uncertainty due to data randomness or model architecture constraints, Gaussian probabilistic model is constructed to define the self-adaptive weights and update the dynamic weights per epoch built on maximum likelihood estimation. Compared with the finite element method, the proposed physics informed neural network method can lead to a speedup with less than 0.1% mean square error. Experimental results also show that the proposed model achieves excellent performance over other competing methods and high robustness under different values of initial weights, different numbers of hidden layers and neurons per layer.

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal modelling of through silicon via (TSV) interconnects

Multiphysics Characterization of Transient Electrothermomechanical Responses of Through-Silicon Vias Applied With a Periodic Voltage Pulse

Hybrid Physical Field Simulation: Transient Electro-Thermo-Mechanical Responses Of Interwafer Interconnects Under The Impact Of An Emp

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Transient Electro-Thermo-mechanical Responses of Wire Bonding Interconnects Illuminated by an Electromagnetic Pulse

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Modeling and Characterization of Joule Heating in Metal Core of Tsv

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models

Physics-Informed Learning Based Multiphysics Simulation for Fast Transient TSV Electromigration Analysis

Electromigration Induced Stress in Through-Silicon-via (TSV)