Abstract:3D stacking of integrated circuits (ICs) provides significant advantages in saving device footprints, improving power management, and continuing performance enhancement, particularly for many-core systems. However, the stacked structure makes the heat dissipation a challenging issue. While Thermal Through Silicon Via (TTSV) is a promising way of lowering the thermal resistance of dies, past research has either overestimated or underestimated the effects of TTSVs as a consequence of the lack of detailed 3D IC models or system-level simulations. Here, we propose a simulation flow to accurately simulate TTSV effects on 3D ICs. We adopt benchmarks from Splash-2 running on a full-system mode of the gem5 simulator, which generates all the system component activities. McPAT is used to generate the corresponding power consumption and the power traces are fed to HotSpot for thermal simulation. The temperature profiles of 2D and 3D Nehalem-like ×86 processors are compared. TTSVs are later placed close to hotspot regions to facilitate heat dissipation; the peak temperature of 3D Nehalem is reduced by 5--25% with a small area overhead of 6%. By using a detailed 3D thermal model, full-system simulation, and a validated thermal simulator, our results show accurate thermal analysis of 3D ICs.

Modeling and Characterization of Joule Heating in Metal Core of Tsv

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Electrothermal characteristics of carbon-based through-silicon via (TSV) channel

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Lumped 3-D Equivalent Thermal Circuit Model for Transient Thermal Analysis of TSV Array

System-Level Analysis of 3D ICs with Thermal TSVs

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures

Electrical-Thermal Co-Simulation For Through Silicon Via And Active Tier In 3-D Ic

The thermal stress analysis in 3D IC integration with TSV interposer

The Development of Effective Model for Thermal Conduction Analysis for 2.5D Packaging Using TSV Interposer

A Thermal Network Model for Multichip Power Modules Enabling to Characterize the Thermal Coupling Effects

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models