Abstract:Three-dimensional (3D) interconnection technology based on glass through vias (TGVs) has been used to integrate passive devices, and optoelectronic devices due to its superior electrical qualities, outstanding mechanical stability, and lower cost. Nevertheless, the performance and reliability of the device will be impacted by the thermal stress brought on by the mismatch of the coefficient of thermal expansion among multi-material structures and the complicated structure of TGV. This paper focuses on thermal stress evolution in different geometric and material parameters and the development of a controlled method for filling polymers in TGV interconnected structures. In addition, a numerical study based on the finite element (FE) model has been conducted to analyze the stress distribution of the different thicknesses of TGV-Cu. Additionally, a TGV interconnected structure model with a polymer buffer layer is given to solve the crack problem appearing at the edge of RDL. Meanwhile, after practical verification, in comparison to the experimental results, the FE model was shown to be highly effective and accurate for predicting the evolution of stress, and several recommendations were made to alleviate stress-related reliability concerns. An improved manufacturing process flow for the TGV interconnected structure was proposed and verified as feasible to address the RDL crack issue based on the aforementioned research. It provides helpful information for the creation of highly reliable TGV connection structures.

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Multiphysics Characterization of Transient Electrothermomechanical Responses of Through-Silicon Vias Applied With a Periodic Voltage Pulse

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Interfacial Stress in Through Silicon Vias

Modeling and Characterization of Joule Heating in Metal Core of Tsv

The fatigue failure analysis of 3D SiP with Through Silicon Via

Thermal Stresses of Tsvs with Silicon Post Conductors and Polymer Insulators

Thermo-Mechanical Reliability Study of Through Glass Vias in 3D Interconnection