Abstract:Impact caused by Through-Silicon Via (TSV) induced thermo-mechanical stress on device performance has been a concern for three-dimensional (3D) integrated circuit (IC) integration because of the close proximity of TSVs to semiconductor devices. From the literatures, there are conflicting reports between theory, simulated and experimental results. For realistic and reasonably accurate predictions, the stress build-up by taking the full CMOS process flow into consideration is simulated. We investigated various key factors such as the orientation of TSV to device, device channel length and different CMOS technologies on the impact of TSV induced thermo-mechanical stress on device performance. Results exhibit that TSV induced stress impacts more on long channel nMOSFETs typically used in analog applications than that on digital devices of minimum channel length for the same CMOS technology. This is mainly due to the decrease in the impact of tensile stress liner in the long channel nMOSFET. In addition, the impact of TSV induced stress on nMOSFET devices of the same channel length of 180 nm is found to be larger for 130 nm technology than 28 nm and 65 nm technologies, which resolves conflicts in past reports.

Multiphysics Characterization of Transient Electrothermomechanical Responses of Through-Silicon Vias Applied With a Periodic Voltage Pulse

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrothermal modelling of through silicon via (TSV) interconnects

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Electrothermal characteristics of carbon-based through-silicon via (TSV) channel

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Multiphysics Characterization of Large-Scale Through-Silicon-via Structures

Transient Electrothermal Analysis of Interconnects in the Presence of a ESD pulse

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electro-Thermo-Mechanical Investigation On Multi-Level Interconnects In The Presence Of An Esd Pulse

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance