Abstract:This paper investigates the electron and phonon transport and their implications for performance and reliability of single-walled carbon nanotube (SWCNT), double-walled carbon nanotube (DWCNT), and multiwalled carbon nanotube (MWCNT) vias-possibly the most imminent application of carbon nanotube (CNT)-based components in very large scale integration chips. Accurate resistance and thermal conductance models are provided for isolated CNTs, as well as bundles of these, based on detailed electrical and thermal transport physics in the submicrometer regime. It is found that although CNT vias are both electrically and thermally in the ballistic regime, their electrical and thermal performance still cannot match that of Cu via. While the large resistance of CNT vias may not be a significant concern for local interconnects, the resistance must be minimized to avoid degradation of global interconnect performance. Furthermore, detailed 3-D electrothermal simulations indicate that Joule heating and thermal contact resistance between CNTs and metal can be a major bottleneck in extracting the maximum thermal performance from ballistic CNT bundle vias. From a processing perspective, we show that the applicability of MWCNT vias, which are currently being fabricated, is severely limited by their large thermal and electrical resistance. For SWCNT- and DWCNT-based vias, small-diameter CNTs with dense packing as well as good thermal and electrical contact between CNT and metal are needed.

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal modelling of novel through-silicon carbon nanotube bundle vias (TS-CNTBV)

Carbon Nanotube Vias: A Reality Check

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Carbon Nanotube Vias: Does Ballistic Electron–Phonon Transport Imply Improved Performance and Reliability?

Electrothermal characteristics of carbon-based through-silicon via (TSV) channel

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Modeling and Characterization of Carbon-Based Heterogeneous Interconnects for 3-D Ics

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electromagnetic Compatibility-Oriented Study on Through Silicon Single-Walled Carbon Nanotube Bundle Via (TS-SWCNTBV) Arrays

High-Frequency Analysis of Cu-Carbon Nanotube Composite Through-Silicon Vias

Electrical Modeling of Three-Dimensional Carbon-Based Heterogeneous Interconnects

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal Cosimulation of 3-D Carbon-Based Heterogeneous Interconnects

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Modeling of carbon nanotube (CNT) interconnects

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Modeling of a Pair of Annular Through Silicon Vias (TSV)