Abstract:As semiconductor integration scales expand and chip sizes shrink, Through Silicon Via (TSV) technology advances towards smaller diameters and higher aspect ratios, posing significant challenges in thermo-mechanical reliability, particularly within interposer substrates where mismatched coefficients of thermal expansion exacerbate issues. This study conducts a thermo-mechanical analysis of TSV structures within multi-layered complex interposers, and analyzes the thermal stress behavior and reliability under variable temperature conditions (-55 °C to 85 °C), taking into account the typical electroplating defects within the copper pillars in TSVs. Initially, an overall model is established to determine the critical TSV locations. Sub-model analysis is then employed to investigate the stress and deformation of the most critical TSV, enabling the calculation of the temperature cycle life accordingly. Results indicate that the most critical TSV resides centrally within the model, exhibiting the highest equivalent stress. During the temperature cycling process, the maximum deformation experiences approximately periodic variations, while the maximum equivalent stress undergoes continuous accumulation and gradually diminishes. Its peak occurs at the contact interface corner between the TSV and Redistribution Layer (RDL). The estimated life of the critical point is 3.1708 × 105 cycles. Furthermore, it is observed that electroplating defect b alleviates thermal stress within TSVs during temperature cycling. This study provides insights into TSV thermal behavior and reliability, which are crucial for optimizing the design and manufacturing processes of advanced semiconductor packaging.

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Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

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Electrothermal modelling of through silicon via (TSV) interconnects

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

An Analytical Model of Thermal Mechanical Stress Induced by Through Silicon Via

Reliable Design of Electroplated Copper Through Silicon Vias

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Finite Element Analysis of the Thermal-Hygroscopic Stress of the Through Silicon Vias(TSV) Interconnect Structure

ANALYSIS OF THERMAL STRESS IN THROUGH SILICON VIA OF INTERPOSER

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Brief Overview of the Impact of Thermal Stress on the Reliability of Through Silicon Via: Analysis, Characterization, and Enhancement

Strain Gradient Finite Element Analysis of Size Dependence of Thermal Stresses in Through-Silicon Vias (Tsvs)

Analysis on Annealing-Induced Stress of Blind-Via TSV Using FEM

Investigation of Elastic Fields Within Through-silicon Vias Using a Finite Element Model with Thermal Stresses and Joule Heating Present

The Reliability of Through Silicon Via under Thermal Cycling

Influences of Size and Material of Through-Silicon Via on Thermo-mechanical Stress

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance