Abstract:Three-dimensional (3D) integration is considered an effective approach to extend and expand Moore's Law. Among them, Through-Silicon Via (TSV) technology provides mechanical support, heat conduction, and electrical connections for vertically stacked chips. The multilayer interface structure of TSV and the significant differences in the coefficient of thermal expansion (CTE) between layers can lead to complex thermal stress in TSV structures under heating conditions, which can degrade the performance of Three-Dimensional Integrated Circuits (3D ICs). This article systematically summarizes the current research status of copper pillar extrusion protrusions, Cu/Si interface integrity damage, and carrier mobility changes caused by thermal stress, focusing on the failure mechanisms and models of each aspect, elucidating the influencing factors and potential destructive failures. It then outlines and compares the advantages and disadvantages of micro-Raman spectroscopy, bending beam technology, and synchrotron X-ray microdiffraction technology in characterizing thermal stress in TSV structures. Characterizing thermal stress is beneficial for determining stress distribution and reliability risks of TSV. Finally, based on the analysis of the reliability impacts of the three major aspects mentioned above, measures to reduce the reliability impacts of thermal stress from the perspectives of heat dissipation, structure, materials, and processes in recent years are summarized. This article aims to deepen researchers' understanding of the main failure modes caused by thermal stress on TSV structures and provide theoretical guidance for building stable and reliable TSV structures.

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

On the Impact of Through-Silicon-Via-Induced Stress on 65-Nm Cmos Devices

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Electric-thermo-mechanical Analysis of TSV under High Current Stressing

Analytical Models For The Thermal Strain And Stress Induced By Annular Through-Silicon-Via (Tsv)

Brief Overview of the Impact of Thermal Stress on the Reliability of Through Silicon Via: Analysis, Characterization, and Enhancement

Performanace and Reliability Analysis of 3D-Integration Structures Employing Through Silicon Via (TSV)

Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration

An Analytical Model of Thermal Mechanical Stress Induced by Through Silicon Via

Thermo-Mechanical Characterization of Single-Walled Carbon Nanotube (Swcnt)-Based Through-Silicon Via (TSV) in (100) Silicon

Physical-Based Threshold Voltage and Mobility Models Including Shallow Trench Isolation Stress Effect on Nmosfets

Impact of 3D Via Middle TSV Process on 20nm Wafer Level FEOL and BEOL Reliability

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

Comprehensive Stress Effect of Thin Coatings and Silicon-Carbon Lattice Mismatch on Nano-Scaled Transistors with Protruding Poly Gate

Theoretical Study of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in P-Type Ultrathin Body-FinFET by Multiphysics Simulation

Interfacial Stress in Through Silicon Vias