Abstract:Through-silicon via (TSV) structures are widely used in microelectronic due to the ease of chip interconnection. Few research has focused on investigating the fatigue properties of TSV structures using crystal plasticity finite element (CPFE) simulations. As the process of TSV structures approaches the micron scale, the effects of anisotropic microstructure and grain size on their fatigue behaviours will become necessary. The present work aims to use CPFE simulations to investigate the fatigue properties of TSVs at the microscale. Finite element models with realistic EBSD morphology and orientation are established for four TSV structures with different grain sizes, and CPFE simulations with thermal cyclic loading from -55°C to 125°C are performed. From the energy point of view, the stored energy density based on backstress and strain gradient is proposed as a fatigue indicator parameter (FIP). CPFE simulation results show that low-angle grain boundaries (LAGBs) and high-angle grain boundaries (HAGBs) dominate crack initiation at the top, bottom or edges of the TSV structure, which is still mainly due to the thermal mismatch effect caused by the difference in the coefficients of thermal expansion of the materials. The crack initiation in the internal structure is mainly caused by symmetric grains containing twin boundaries (TBs), or trigrain boundaries, and this is different from the macroscopic simulations. Combined with the local FIPs concentration distribution, the backstress stored energy density is able to capture more details than the cumulative plastic strain because of its direct correlation with the strain gradient, and validates its effectiveness as a FIP.

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

The fatigue failure analysis of 3D SiP with Through Silicon Via

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Strain Gradient Finite Element Analysis of Size Dependence of Thermal Stresses in Through-Silicon Vias (Tsvs)

Electrothermal modelling of through silicon via (TSV) interconnects

Interfacial Stress in Through Silicon Vias

Transient Electrothermal Analysis of Multilevel Interconnects in the Presence of ESD Pulses Using the Nonlinear Time-Domain Finite-Element Method

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

The thermal stress analysis in 3D IC integration with TSV interposer

Thermal Stress and Reliability Analysis of TSV-Based 3-D ICs with a Novel Adaptive Strategy Finite Element Method

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

System-Level Analysis of 3D ICs with Thermal TSVs

Simulation and Evaluation of Thermal Mechanical Reliability of 3D-Tsv Stack with Viscoelastic Underfill

Stress Analysis and Layout Optimization of Nano-TSV in an Advanced Packaging

Fatigue behaviour analysis of thermal cyclic loading for through-silicon via structures based on backstress stored energy density

Influence of Viscoelastic Underfill on Thermal Mechanical Reliability of a 3-D-TSV Stack by Simulation