Abstract:With the development of integrated circuit towards the characteristics of the low-power consumption, miniaturization and high integration, three-dimensional integration technology based on Through-Silicon Via (TSV) comes into being. However, the thermal accumulation caused by the maximum stack density and the thermal stress caused by the mismatched thermal expansion coefficient between TSV surrounding materials will lead to the reliability problems such as circuit function failure and device performance drift. In this paper, the heat dissipation performance and thermal-mechanical reliability of TSV array in 2.5D silicon interposer were studied when the operation temperature is increased from 20°C to 100°C. Firstly, the influences of the geometrical parameters, such as the through hole radius, depth to width ratio, insulation thickness and TSV spacing, on thermal-mechanical reliability were analyzed for single TSV, paired TSV and 3*3 TSV array structures. Secondly, a configuration of TSV regular hexagonal array in silicon interposer is proposed to improve its heat dissipation performance.Our simulation results disclose that the stress is mainly concentrated at the junction where SiO2 layer deviates to copper and silicon substrate deviates to SiO2, which indicates the SiO2 layer is most prone to fracture. The through hole radius should be designed as small as possible to reduce the thermal stress, and a thicker SiO2 insulation layer thickness will induce the better thermal-mechanical stability of TSV. The optimized TSV's depth to width ratio should be set above 5 with the simultaneous consideration of the stress for silicon substrate, insulating layer, filled copper. For multiple TSVs, the spacing should be greater than twice the diameter to eliminate the influence of thermal stress between TSVs. In addition, in the case of the same spacing, the equivalent unit temperature of TSV regular hexagonal array distribution is 2.9°C lower than that of conventional matrix array distribution. The analysis and design of TSV array in 2.5D silicon interposer is promising to offer guideline to the future advanced package development.

Influence of Viscoelastic Underfill on Thermal Mechanical Reliability of a 3-D-TSV Stack by Simulation

Simulation and Evaluation of Thermal Mechanical Reliability of 3D-Tsv Stack with Viscoelastic Underfill

Influence of Electroplating Current Density on Through Silicon Via Filling

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

The fatigue failure analysis of 3D SiP with Through Silicon Via

Interfacial Stress in Through Silicon Vias

Modeling of Underfilled PBGA Assemblies Using Both Viscoelastic and Elastic Material Properties

Strain Gradient Finite Element Analysis of Size Dependence of Thermal Stresses in Through-Silicon Vias (Tsvs)

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Processes-based Multistep Simulation of Thermal- mechanical Reliability of a 3D-TSV MEMS

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Finite element analysis of 2.5D packaging processes based on multi-physics field coupling for predicting the reliability of IC components

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Reliable Design of Electroplated Copper Through Silicon Vias

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer