Abstract:The dimensions of copper through-silicon vias (Cu-TSVs) have been shrunk to a microscopic scale, where the sizes of the copper grains are comparable to the vias, and thus the microstructure of the copper in the vias should be taken into consideration for reliability predictions. This paper focuses on the influences of the grain size distributions on the thermal-mechanical behaviors of the TSVs. Copper grains in TSVs are generated by both the Voronoi algorithm and a phase field method. The equations relating the yield stress and the Young's modulus with respect to grain size are derived from experimental data. Two different boundary conditions are applied to the TSV models in the thermal-mechanical simulations and the thermal stresses of the microstructural models are calculated using the finite element method (FEM). The results from the microstructural models are then compared with the results from the reference model which ignores the grain structures. The results show that the copper grains can influence the thermal stresses in the via with negligible effects on other regions of the TSV. Smaller grains result in higher stresses, and the increase in stress can be as high as 30 MPa. The influence of the grain size distribution on thermal stress depends on the location of the grains as well as the applied boundary conditions. The grains with similar sizes in different grain structures can exhibit a difference in thermal stress around 10 MPa, whereas a difference in the boundary condition can lead to a completely different stress distribution.

Strain Gradient Finite Element Analysis of Size Dependence of Thermal Stresses in Through-Silicon Vias (Tsvs)

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal modelling of through silicon via (TSV) interconnects

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

Interfacial Stress in Through Silicon Vias

Finite Element Analysis of the Thermal-Hygroscopic Stress of the Through Silicon Vias(TSV) Interconnect Structure

Multi-physics characterization of through silicon vias (TSV) in the presence of a periodic EMP

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Modeling Simplification for Thermal Mechanical Stress Analysis of TSV Interposer Stack

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

The Influences of Grain Size Distributions on Thermal-Stresses in Cu-TSV

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

The thermal stress analysis in 3D IC integration with TSV interposer

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

ANALYSIS OF THERMAL STRESS IN THROUGH SILICON VIA OF INTERPOSER

Reliable Design of Electroplated Copper Through Silicon Vias