Abstract:Through-silicon vias, usually considered to a good candidate for vertical connections, lead to shorter length of connections and higher packaging densities. Here, a finite-element model is built to study the elastic performance of TSVs. The structure of a modeled TSV includes one dielectric layer (silicon dioxide) on the surface of the silicon chip and one BCB liner around the Cu via. Important factors such as thermal stresses, as well as Joule heating, are included in this model. First, the electric field is determined by solving a quasi-stationary equation of electrical conduction, which helps to find the effect of Joule heating. Then, a quasi-stationary equation on the temperature field is solved with Joule heating present to obtain the temperature distribution. Finally, the equations of mechanical equilibrium with thermal stresses present are solved to find the elastic displacements, which eventually lead to the elastic strains and stresses. Thus, the von Mises stress can be obtained and used for the evaluation of the elastic performance of TSVs. Simulation results show that the thermal stresses play an important role within TSVs. The maximums of Mises stress calculated at 35 °C and 45 °C are several times higher than that at the room temperature and the locations of these maximums are around the interfaces of the Cu via near the top and bottom boundaries. Joule heating is found to result in a maximum of the temperature at the center of the Cu via and lead to a further increase of the maximums of the Mises stress.

Finite Element Analysis of the Thermal-Hygroscopic Stress of the Through Silicon Vias(TSV) Interconnect Structure

Electrothermal modelling of through silicon via (TSV) interconnects

Interfacial Stress in Through Silicon Vias

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Strain Gradient Finite Element Analysis of Size Dependence of Thermal Stresses in Through-Silicon Vias (Tsvs)

Investigation of Elastic Fields Within Through-silicon Vias Using a Finite Element Model with Thermal Stresses and Joule Heating Present

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

ANALYSIS OF THERMAL STRESS IN THROUGH SILICON VIA OF INTERPOSER

An Analytical Model of Thermal Mechanical Stress Induced by Through Silicon Via

Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

Influences of Size and Material of Through-Silicon Via on Thermo-mechanical Stress

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Analysis on Annealing-Induced Stress of Blind-Via TSV Using FEM

Electric-thermo-mechanical Analysis of TSV under High Current Stressing

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Electromigration Induced Stress in Through-Silicon-via (TSV)

Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Copper Filled Through Silicon Vias Using Coupled Phase Field and Finite Element Methods

The thermal stress analysis in 3D IC integration with TSV interposer