Abstract:3D packaging has broad applications due to its high integration, lightweight, small package size and low cost. Through silicon vias (TSV) have attracted much attention as the only packaging technology to achieve vertical interconnection. The quality of superior filling by electroplated copper (Cu) determines the reliability of TSV in electronic devices. As one of the most vital additives, levelers are always the confidential part of electrolyte formulations. In general, a nitrogen-containing heterocyclic compound can be employed as a potential leveler for TSV filling, like Janus Green B (JGB). However, the mechanism of the leveler during copper electrodeposition is shrouded in mystery. Whether the nitrogen-nitrogen double bond (-N=N-) or the nitrogen cation (N+) in the JGB molecule take the effect in electroplating is still a hot topic of debate. Here, three levelers with or without -N=N-, containing JGB, phenosafranin (PS) and phenazine methosulfate (PMS), are utilized in the TSV electroplated process to explore the active site of molecules. The filling performance of different levelers were compared. Electrochemical measurements was used to investigate the leveling mechanism. The optical microscope (OM) and ultraviolet spectrophotometer (UV-vis) were used to characterize the filling quality and the change of electrolyte before and after electrodeposition. The results of characterizations confirmed that both -N=N- and N+ play a certain effect in electroplating, the reductive reaction of -N=N- competes with Cu reduction and the electrostatic adsorption of N+ and Cl- enables the deposition inhibition of Cu at salient sites.

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Influence of Electroplating Current Density on Through Silicon Via Filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Study of internal stress on electroplating copper used in through silicon via filling

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

Impact of Bath Stability on Electroplated Cu for TSVs in a Controlled Environment

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Impact of Bath Stability on Electroplated Cu for Through-Silicon-Vias (TSV) in a Controlled Manufacturing Environment

FEA study on the TSV copper filling influenced by the additives and electroplating process

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Effective Approach for TSV Cu Plating Gap Fill Improvement

Effect of additives on copper electroplating profile for TSV filling

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Reliable Design of Electroplated Copper Through Silicon Vias

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance