Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Li-Yin Gao,Zhi-Quan Liu,Ke Chen,Rong Sun

DOI: https://doi.org/10.1109/ICEPT59018.2023.10492152

2023-08-08

Abstract:3D packaging has broad applications due to its high integration, lightweight, small package size and low cost. Through silicon vias (TSV) have attracted much attention as the only packaging technology to achieve vertical interconnection. The quality of superior filling by electroplated copper (Cu) determines the reliability of TSV in electronic devices. As one of the most vital additives, levelers are always the confidential part of electrolyte formulations. In general, a nitrogen-containing heterocyclic compound can be employed as a potential leveler for TSV filling, like Janus Green B (JGB). However, the mechanism of the leveler during copper electrodeposition is shrouded in mystery. Whether the nitrogen-nitrogen double bond (-N=N-) or the nitrogen cation (N+) in the JGB molecule take the effect in electroplating is still a hot topic of debate. Here, three levelers with or without -N=N-, containing JGB, phenosafranin (PS) and phenazine methosulfate (PMS), are utilized in the TSV electroplated process to explore the active site of molecules. The filling performance of different levelers were compared. Electrochemical measurements was used to investigate the leveling mechanism. The optical microscope (OM) and ultraviolet spectrophotometer (UV-vis) were used to characterize the filling quality and the change of electrolyte before and after electrodeposition. The results of characterizations confirmed that both -N=N- and N+ play a certain effect in electroplating, the reductive reaction of -N=N- competes with Cu reduction and the electrostatic adsorption of N+ and Cl- enables the deposition inhibition of Cu at salient sites.

Engineering,Chemistry,Materials Science