Abstract:3D packaging has broad applications due to its high integration, lightweight, small package size and low cost. Through silicon vias (TSV) have attracted much attention as the only packaging technology to achieve vertical interconnection. The quality of superior filling by electroplated copper (Cu) determines the reliability of TSV in electronic devices. As one of the most vital additives, levelers are always the confidential part of electrolyte formulations. In general, a nitrogen-containing heterocyclic compound can be employed as a potential leveler for TSV filling, like Janus Green B (JGB). However, the mechanism of the leveler during copper electrodeposition is shrouded in mystery. Whether the nitrogen-nitrogen double bond (-N=N-) or the nitrogen cation (N+) in the JGB molecule take the effect in electroplating is still a hot topic of debate. Here, three levelers with or without -N=N-, containing JGB, phenosafranin (PS) and phenazine methosulfate (PMS), are utilized in the TSV electroplated process to explore the active site of molecules. The filling performance of different levelers were compared. Electrochemical measurements was used to investigate the leveling mechanism. The optical microscope (OM) and ultraviolet spectrophotometer (UV-vis) were used to characterize the filling quality and the change of electrolyte before and after electrodeposition. The results of characterizations confirmed that both -N=N- and N+ play a certain effect in electroplating, the reductive reaction of -N=N- competes with Cu reduction and the electrostatic adsorption of N+ and Cl- enables the deposition inhibition of Cu at salient sites.

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Influence of Electroplating Current Density on Through Silicon Via Filling

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Simulation of TSV Copper Electrodeposition Process with Additives

Numerical Model with Competitively Adsorptive Mechanism for Copper Electrodeposition of TSV

RETRACTED: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Electrochemical and analytical study of electroplating additive in copper plating solution for microvia filling

Electroless Plating of Copper via a Sn-Free Process on Dielectric SiLK Surface Modified by UV-Induced Graft Copolymerization with 4-Vinylpyridine and 1-Vinylimidazole

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Effect of additives on copper electroplating profile for TSV filling

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Copper electroplating of through silicon vias (TSV) using a series of nitrogen-containing heterocyclic compounds

Electrochemical behaviors of additives in high Cu(II) concentration solution for high-aspect-ratio through ceramic holes filling

Study of internal stress on electroplating copper used in through silicon via filling

Novel, Simple, and Green Citrate-Based Copper Electronic Electroplating Bath in Microvia Void-Free Filling for Printed Circuit Board Application