Abstract:Three-dimensional integration with through-silicon vias (TSVs) is a promising microelectronic interconnection technology. Three-component additives are commonly used for void-free TSV filling. However, optimising the additive concentrations is an expensive process. To avoid this, a single-component additive was developed: 3-(2-(4,5-dihydrothiazol-2-yl) disulfanyl) propane-1-sulfonic acid/sulfonate (SH110). Sodium 3,3'-dithiodipropane sulfonate (SPS) and SH110 were used as additives for TSV electroplating copper filling. SH110 resulted in void-free filling, whereas large keyhole voids were found for SPS. To understand how the additives affect the filling mechanism, linear sweep voltammetry of the plating solutions was carried out. The interactions between the Cu surface and additives were simulated by molecular dynamics (MD) analysis using Materials Studio software, and quantum chemistry calculations were conducted using GAUSSIAN 09W. SH110 adsorbs to the Cu surface by both 4,5-dihydrothiazole (DHT) and 3-mercaptopropane sulfonate (MPS) moieties, while SPS is adsorbed only by MPS moieties. MD simulations indicated that the adsorption of the coplanar MPS moiety is the main factor governing acceleration. Quantum chemistry calculations showed that DHT provides an inhibitory effect for TSV filling, while MPS acts as an accelerator for SH110. SH110 is an excellent additive exhibiting both the acceleration and the suppression necessary for achieving void-free TSV filling.

Effect of additives on copper electroplating profile for TSV filling

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Simulation of TSV Copper Electrodeposition Process with Additives

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Numerical Model with Competitively Adsorptive Mechanism for Copper Electrodeposition of TSV

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Electrochemical Analysis of Cathode in TSV Copper Electroplating

FEA study on the TSV copper filling influenced by the additives and electroplating process

Numerical Modeling And Experimental Verification Of Through Silicon Via (Tsv) Filling In Presence Of Additives

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

Electrochemical behaviors of additives in high Cu(II) concentration solution for high-aspect-ratio through ceramic holes filling

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Simulation of through via bottom-up copper plating with accelerator for the filling of TSVs