Abstract:Through silicon via (TSV) technology is the key enabling technology of high density, high performance three dimensional packaging such as System-in-Package (SiP) and System-on-Chip (SoC). In TSV technology, to obtain high-aspect ratio vias with good electrical and mechanical properties, filling the material (copper mostly) without voids or seams in the vias is vitally important. The filling properties of the copper is influenced significantly by the additives in the electrolyte, especially the accelerator and suppressor. In this simulation work, the electroplating process was described by a mathematical model, in which the fluid flow of electrolyte, the mass transport of the charged and neutral species and electrochemical reactions on the electrode surface were involved. Based on the mathematical model, the surface coverage of the additives and the local current density distribution at the electrode/electrolyte interface were calculated. The results show that the kinetics and mechanism of the copper deposition reaction are dependent on the fractional surface coverage of the additives. The results show that the suppressor is prior to adsorb at the electrode surface than the accelerator, due to the competitive adsorption of the suppressor and accelerator, by following the Langmiur isotherm adsorption model. Moreover, the coverage of the accelerator (SPS, Na-2(S(CH2)(3)SO3)) is high at the TSV bottom and relatively low at the TSV top. The local current density at the TSV bottom is larger than that at the TSV top and surface due to the influence of the surface coverage of the accelerator and suppressor, which contribute to the superfilling of TSV.

Numerical Modeling And Experimental Verification Of Through Silicon Via (Tsv) Filling In Presence Of Additives

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Influence of Electroplating Current Density on Through Silicon Via Filling

Numerical Model with Competitively Adsorptive Mechanism for Copper Electrodeposition of TSV

Simulation of TSV Copper Electrodeposition Process with Additives

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Mathematical Simulation and Experimental Verification for Through Silicon Via with Additives

Numerical Simulation and Experimental Verification of Additive Distribution in Through-Silicon Via During Copper Filling Process

A Novel Model for Through-Silicon Via (TSV) Filling Process Simulation Considering Three Additives and Current Density Effect

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Numerical Simulation and Mechanism Analysis of Through-Silicon Via (TSV) Filling Using an Arbitrary Lagrange-Eulerian (ALE) Method

Numerical Simulation of the Tsv-Cu Filling by Electroplating Process with the Accelerator and Suppressor

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Effect of additives on copper electroplating profile for TSV filling

Parameters determination for modelling of copper electrodeposition in through-silicon-via with additives

Simulation of through via bottom-up copper plating with accelerator for the filling of TSVs

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Collaborative Effect Between Additives and Current in TSV Via Filling Process