Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Wetting Process of Copper Filling in Through Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Effect of Pretreatment on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Parametric study of electroplating-based via-filling process for TSV applications

Pure Bottom-up filling process for efficient TSV metallization

Optimization of Cu electrodeposition parameters for Through Silicon Via (TSV)

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Effect of Ultrasound on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Effect of Different Pretreatments on Through Silicon Via Copper Filling

Filling Technique Of Through Silicon Via By Co-Depositing Copper And Sic Nano-Particles

Fast copper plating process for TSV fill

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

FEA study on the TSV copper filling influenced by the additives and electroplating process

Effect of Cetyl-Trimethyl-ammonium-bromide (CTAB) and Bis (3-Sulfopropyl) Disulfide (SPS) on the Through-Silicon-via (TSV) Copper Filling