Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Investigations of the electrochemical performance and filling effects of additives on electroplating process of TSV

Influence of Electroplating Current Density on Through Silicon Via Filling

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Potential-Dependence Of Additives Distribution In Copper Electrodeposition Via Filling

Electrochemical Analysis of Cathode in TSV Copper Electroplating

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Numerical Model with Competitively Adsorptive Mechanism for Copper Electrodeposition of TSV

A Numerical Model for Bottom-Up Copper Electrodeposition of TSV with Additives

Simulation of TSV Copper Electrodeposition Process with Additives

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Effect of additives on copper electroplating profile for TSV filling

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

FEA study on the TSV copper filling influenced by the additives and electroplating process

Numerical Modeling And Experimental Verification Of Through Silicon Via (Tsv) Filling In Presence Of Additives

Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Parametric study of electroplating-based via-filling process for TSV applications

Influence of Convection-Dependent Adsorption of Additives on Microvia Filling by Copper Electroplating

Investigation of a Single-Component Additive for Bottom-Up Superfilling of the High-Aspect-Ratio TSV by Theoretical and Experimental Studies