Abstract:Two dimensional (2D) integration has been the traditional approach for IC integration. Due to increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages, has driven the semiconductor industry to develop more advanced packaging technologies. Three-dimensional (3D) approaches address both miniaturization and integration required for advanced and portable electronic products. Vertical integration proved to be essential in achieving a greater integration flexibility of disparate technologies, reason for which a general trend of transition from 2D to 3D integration is currently being observed in the industry. 3D chip integration using through silicon via (TSV) copper is considered one of the most advanced technologies among all different types of 3D packaging technologies. Copper electrodeposition is one of technologies that enable the formation of TSV structures. Because of its well-known application for copper damascene, it was believed that its transfer to filling TSV vias would be easily adopted. However, as any new technology at its beginning, there are several challenges that need to be addressed and resolved before becoming a fully mature technology. This paper will address the TSV fill processes using copper electrodeposition, the advantages as well as difficulties associated with this technology and approaches taken to overcome them. Electrochemical characterization of the organics behavior and their effect on via filling will be presented. The effect of wafer design on process performance and throughput, including necessary process optimizations that are required for achieving void-free via filling while reducing the processing time, will be discussed.

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Fast copper plating process for TSV fill

Electrochemical Analysis of Cathode in TSV Copper Electroplating

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

TSV Filling Technology using Cu Electrodeposition

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Copper Electrodeposition for 3D Integration

Effective Approach for TSV Cu Plating Gap Fill Improvement

Impact of Bath Stability on Electroplated Cu for Through-Silicon-Vias (TSV) in a Controlled Manufacturing Environment

Impact of Bath Stability on Electroplated Cu for TSVs in a Controlled Environment

Effect of additives on copper electroplating profile for TSV filling

Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

Parametric study of electroplating-based via-filling process for TSV applications

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Experiment and simulation of single inhibitor SH110 for void-free TSV copper filling

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Through silicon via copper electrodeposition for 3D integration