Abstract:Two dimensional (2D) integration has been the traditional approach for IC integration. Due to increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages, has driven the semiconductor industry to develop more advanced packaging technologies. Three-dimensional (3D) approaches address both miniaturization and integration required for advanced and portable electronic products. Vertical integration proved to be essential in achieving a greater integration flexibility of disparate technologies, reason for which a general trend of transition from 2D to 3D integration is currently being observed in the industry. 3D chip integration using through silicon via (TSV) copper is considered one of the most advanced technologies among all different types of 3D packaging technologies. Copper electrodeposition is one of technologies that enable the formation of TSV structures. Because of its well-known application for copper damascene, it was believed that its transfer to filling TSV vias would be easily adopted. However, as any new technology at its beginning, there are several challenges that need to be addressed and resolved before becoming a fully mature technology. This paper will address the TSV fill processes using copper electrodeposition, the advantages as well as difficulties associated with this technology and approaches taken to overcome them. Electrochemical characterization of the organics behavior and their effect on via filling will be presented. The effect of wafer design on process performance and throughput, including necessary process optimizations that are required for achieving void-free via filling while reducing the processing time, will be discussed.

Through silicon via copper electrodeposition for 3D integration

Copper Electrodeposition for 3D Integration

Influence of Electroplating Current Density on Through Silicon Via Filling

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

TSV Filling Technology using Cu Electrodeposition

Fast copper plating process for TSV fill

Copper-Based TSV: Interposer

Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Research of Vertical via Based on Silicon, Ceramic and Glass

Bottom-up Copper Electroplating Using Transfer Wafers for Fabrication of High Aspect-Ratio Through-Silicon-vias

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

3D interconnection process development and integration with low stress TSV

Copper Pulse-Reverse Current Electrodeposition to Fill Blind Vias for 3-D Tsv Integration

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

CU seed, CMP process development and via resistance extraction in through silicon via technology

Cu filling of TSV using various current forms for three‐dimensional packaging application

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

A 3D Integration Testing Vehicle with TSV Interconnects