Abstract:Two dimensional (2D) integration has been the traditional approach for IC integration. Due to increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages, has driven the semiconductor industry to develop more advanced packaging technologies. Three-dimensional (3D) approaches address both miniaturization and integration required for advanced and portable electronic products. Vertical integration proved to be essential in achieving a greater integration flexibility of disparate technologies, reason for which a general trend of transition from 2D to 3D integration is currently being observed in the industry. 3D chip integration using through silicon via (TSV) copper is considered one of the most advanced technologies among all different types of 3D packaging technologies. Copper electrodeposition is one of technologies that enable the formation of TSV structures. Because of its well-known application for copper damascene, it was believed that its transfer to filling TSV vias would be easily adopted. However, as any new technology at its beginning, there are several challenges that need to be addressed and resolved before becoming a fully mature technology. This paper will address the TSV fill processes using copper electrodeposition, the advantages as well as difficulties associated with this technology and approaches taken to overcome them. Electrochemical characterization of the organics behavior and their effect on via filling will be presented. The effect of wafer design on process performance and throughput, including necessary process optimizations that are required for achieving void-free via filling while reducing the processing time, will be discussed.

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Bottom-up Copper Electroplating Using Transfer Wafers for Fabrication of High Aspect-Ratio Through-Silicon-vias

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Wetting Process of Copper Filling in Through Silicon Vias

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Simulation of copper electroplating fill process of through silicon via

Simulation of through via bottom-up copper plating with accelerator for the filling of TSVs

Fast copper plating process for TSV fill

Copper Pulse-Reverse Current Electrodeposition to Fill Blind Vias for 3-D Tsv Integration

Copper Electrodeposition for 3D Integration

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

Modeling and Simulation of Cu Tsv Electroplating for Wafer-Level Mems Vacuum Packaging

Through silicon via copper electrodeposition for 3D integration

Reliable Design of Electroplated Copper Through Silicon Vias