Abstract:Two dimensional (2D) integration has been the traditional approach for IC integration. Due to increasing demands for providing electronic devices with superior performance and functionality in more efficient and compact packages, has driven the semiconductor industry to develop more advanced packaging technologies. Three-dimensional (3D) approaches address both miniaturization and integration required for advanced and portable electronic products. Vertical integration proved to be essential in achieving a greater integration flexibility of disparate technologies, reason for which a general trend of transition from 2D to 3D integration is currently being observed in the industry. 3D chip integration using through silicon via (TSV) copper is considered one of the most advanced technologies among all different types of 3D packaging technologies. Copper electrodeposition is one of technologies that enable the formation of TSV structures. Because of its well-known application for copper damascene, it was believed that its transfer to filling TSV vias would be easily adopted. However, as any new technology at its beginning, there are several challenges that need to be addressed and resolved before becoming a fully mature technology. This paper will address the TSV fill processes using copper electrodeposition, the advantages as well as difficulties associated with this technology and approaches taken to overcome them. Electrochemical characterization of the organics behavior and their effect on via filling will be presented. The effect of wafer design on process performance and throughput, including necessary process optimizations that are required for achieving void-free via filling while reducing the processing time, will be discussed.

Copper Pulse-Reverse Current Electrodeposition to Fill Blind Vias for 3-D Tsv Integration

Influence of Electroplating Current Density on Through Silicon Via Filling

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Wetting Process of Copper Filling in Through Silicon Vias

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Copper Electrodeposition for 3D Integration

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Electrochemical Analysis of Cathode in TSV Copper Electroplating

The Influence of Ultrasonic Agitation on Copper Electroplating of Blind-Vias for SOI Three-Dimensional Integration

Optimizing Copper Filling Process For Through Silicon Via (TSV)

TSV Filling Technology using Cu Electrodeposition

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Fast copper plating process for TSV fill

Cu filling of TSV using various current forms for three‐dimensional packaging application

Through silicon via copper electrodeposition for 3D integration

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via