Abstract:Recent applications require vertical chip stacking to increase the performance of many devices without the need of advanced node components. Image sensors and vision systems will embed more and more smart functions, for instance, image processing, object recognition, and movement detection. In this perspective, the combination of Cu-to-Cu direct hybrid bonding technology with Through-Silicon-Via (TSV) will allow 3D interconnection between pixels and the associated computing and memory structures, each function fabricated on a separate wafer. Wafer-to-wafer hybrid bonding was achieved with multi-pitch design—1–4 μm—of single levels of Cu damascene patterned on 300 mm silicon substrates. Defect-free bonding, as far as the extreme edge of the wafer, was demonstrated on a stack with three wafers. Middle wafers thinning was done with grinding only and with a thickness uniformity (TTV) <2 μm to an ultimate thinning as low as 3 μm. Alignment performance was characterized by post-bonding for two superposed hybrid bonding interfaces. In our set of wafers, modeling the alignment with translation, rotation, and scaling components enables us to optimize the residuals down to 3σ < 100 nm. A process flow of thin TSV with a fine pitch of 2 μm for high-density vertical interconnect through a three-wafer stack was developed. Via-last TSV architecture was adopted with 1 μm TSV diameter and 10 μm thickness. Lithography, etching solutions, Ti/TiN barrier deposition, and void-free Cu filling solutions were demonstrated. TSV cross sections after CMP and connections with top and bottom Cu damascene lines show good profile control. Process developments are matured and can be reliably used in the fabrication of an electrical test vehicle including vertical interconnects associating multi-wafers stacking with a hybrid bonding process and high-density thin TSV applicable to low pitches (<5 μm).

A Wafer-Level 3d Integration Using Bottom-Up Copper Electroplating And Hybrid Metal-Adhesive Bonding

Bottom-up Copper Electroplating Using Transfer Wafers for Fabrication of High Aspect-Ratio Through-Silicon-vias

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

A TSV Last Integration Approach with Wafer Level Pre-Patterned Adhesive Bonding

Three-dimensional hybrid bonding integration challenges and solutions toward multi-wafer stacking

Chip-to-wafer (C2W) 3D integration with well-controlled template alignment and wafer-level bonding

Wafer-Level 3D Integration Based on Poly (Diallyl Phthalate) Adhesive Bonding

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Multi-Chip 3D Integration Using Mechanical Interlock Bonding (MIB) Technology and Optimized TSV

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

A Novel Chip-to-wafer (C2W) Three-Dimensional (3D) Integration Approach Using a Template for Precise Alignment

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Sealing Bump With Bottom-Up Cu TSV Plating Fabrication in 3-D Integration Scheme

3D Integration via D2D Bump-Less Cu Bonding with Protruded and Recessed Topographies

A Cu-Sn/BCB Hybrid Bonding with Embedded Bump Structure

Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

Fabrication of Complicated Three Dimensional Structures Utilizing Multi-Stack Bonding

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application