Abstract:Future compact integration of microwave modules will require intermetallic bonding with pitch connections lower than 10 μm. Solid-liquid interdiffusion (SLID) bonding is a potential bonding method for close heterogeneous integration because of its bonding temperature in the range of solder bonding, its ability to withstand higher temperaturs than bonding and its moderate compatibility with the joining of rough surfaces. This paper presents the results of an investigation of the Au—Sn system for integration of A3B5 chips on wafer level using SLID bonding. A sequence of five layers of Au and Sn with weight ratios of about 3:2 was deposited on a sapphire substrate. The structure and phases of the obtained system were investigated before and after annealing. The initial system has five distinctive alternating layers with an overall thickness of around 4.5 μm. After heat treatment at 320 °C with a holding time of 10 minutes, the Au—Sn system transforms into one layer that consists of only one phase ζ (Au0.853Sn0.147). The homogenization process is completed in less than 10 minutes. The ζ phase, of which the system is composed after annealing, has a melting point of 522 °C, which ensures the high temperature stability of the bonding layer. Bonding using the formed system was conducted. Morphology, elemental composition, and the initial mechanical properties of bonded structures have been studied. There are two types of defects in the joint's cross section: voids and the presence of local interfaces between two surfaces (an unbonded-like line). EDX analysis of the cross section of the joint between two crystals shows that the average ratio of Sn to Au over the cross section of the joint is 10.7 %. The complex of studies conducted suggests that the bonding area mostly includes the ζ phase, which will provide the best mechanical strength characteristics among the phases with a high Au concentration. The average bond shear strength is 32 MPa. Initial robustness results of the bonding are promising for space applications.

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

Experimental and computational investigation of low temperature Cu-Sn solid-state-diffusion bonding for 3D integration

An Insertion-Based Mechanical Interlock Cu-Sn Bonding Structure for Three-Dimensional Integration

Effects of Current Stress for Low Temperature Cu/Sn/Cu Solid-State-Diffusion Bonding

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Low Temperature Fine-Pitch Wafer-Level Cu-Cu Bonding Using Nanoparticles Fabricated by PVD

Low Temperature Cu-Sn Bonding By Isothermal Solidification Technology

Low Temperature and Short Time Au/Sn Solid-liquid Diffusion Bonding for 3D Integration

Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Fast low-temperature–pressure Cu-Sn mechanical interlock bonding (MIB) applied for 3D integration

Study on Ar(5%H-2) Plasma Pretreatment for Cu/Sn/Cu Solid-State-Diffusion Bonding in 3d Interconnection

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Fine-Pitch Cu-Sn Transient-Liquid-Phase Bonding Based on Reflow and Pre-Bonding

Wafer-Level Au—Sn Solid-Liquid Interdiffusion Bonding for Microwave Applications

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

Development of low temperature Cu Cu bonding and hybrid bonding for three-dimensional integrated circuits (3D IC)

Cu–Cu Bonded Microbump Interconnects with a 10- $\mu$ M Pitch for 3-D-stacked Chiplets

Mechanism and Process of Cu-Sn Bonding for Wafer Level MEMS Packaging

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters