Abstract:Microbumps play a pivotal role in interlayer interconnections for advanced packaging. As chip integration density gradually increases, the pitch of microbumps continues to decrease. However, with continuous shrinkage in bump size, tin (Sn) solder spillage during high-temperature bonding has become a severe issue. Owing to the low yield strength of Sn, even a small applied pressure at elevated temperatures can induce excessive deformation. The excessive deformation of the Sn layer will not only deviate from the designed bump structure but also lead to a series of reliability concerns, such as sidewall depletion and joint bridging. Thinning the Sn layer thickness and employing reflow techniques are effective solutions to mitigate Sn spillage, but they are associated with excessive Kirkendall void formation and additional cleaning processes, respectively. In this work, an optimized bonding method for Sn-rich, fine-pitch microbump structures without a flux cleaning process is proposed. This technique combines an initial low-temperature solid-state diffusion (SSD) pre-bonding step and a subsequent rapid reflow process to complete the microbump interconnection. The influence of bonding temperature, bonding pressure, and formic acid environment on bonding quality is analyzed based on shear strength, cross-sectional images and electric tests. Ultimately, the optimized bonding parameters are determined to be pre-bonding at 200°C, 0.8 MPa for 1min, and reflow at 260°C for 1min. Reliable Cu-Sn bonding is achieved while retaining the original Sn profile as much as possible. The optimized bonding method is further validated on samples with different pitches and Sn layer thicknesses. This optimized bonding approach can facilitate accurate control of the bump profile and enable three-dimensional package integration.

Cu–Cu Bonded Microbump Interconnects with a 10- $\mu$ M Pitch for 3-D-stacked Chiplets

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

High Density Cu/Sn Microbump Bonding Technology for 3D Integration

Transient-Liquid-Phase Bonding of Granulated Cu–Sn Bumps with a 4-Μm Fine Pitch

Fine-pitch bump-less Cu-Cu bonding for wafer-on-wafer stacking and its quality enhancement.

Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

High density bump-less Cu-Cu bonding with enhanced quality achieved by pre-bonding temporary passivation for 3D wafer stacking

Study of Three-Dimensional Small Chip Stacking Using Low Cost Wafer-Level Micro-bump/B-Stage Adhesive Film Hybrid Bonding and Via-Last TSVs

A Cu-Sn/BCB Hybrid Bonding with Embedded Bump Structure

Fabrication of High‐Density Micro‐Bump Arrays for 3D Integration of MEMS and CMOS

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Low-Temperature and Low-Pressure Fine-Pitch Micro Cu Bump Bonding Using Stress Migration of a Sputtering Ag Layer

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Optimization of Bonding Methods for Controlling Sn Spillage in Fine Pitch Microbump Applications

3D Integration via D2D Bump-Less Cu Bonding with Protruded and Recessed Topographies

Fabrication and Formation Principle of Porous Cu-Sn Bumps for Metal Bonding in Chiplet Integration

Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology