Abstract:Microbumps play a crucial role in interlayer interconnections for advanced packaging. Among the prevalent microbump structures are Cu/Sn and Cu/Ni/Sn configurations. However, as the bump size continues to shrink, excessive Kirkendall voids tend to form in Cu/Sn microbumps, leading to potential reliability issues. While Cu/Ni/Sn structures can suppress Kirkendall void formation, Ni3Sn4 intermetallic compound (IMC) exhibits inferior physical properties compared to Cu3Sn and Cu6Sn5. In this study, a novel Cu/Ni/Cu/Sn1.8Ag (CNCT) Sn-rich microbump structure with controlled Cu thickness is proposed to suppress Kirkendall void formation while promoting Cu6Sn5 and Cu3Sn as interfacial IMCs. A Ni barrier layer is inserted to partition the Cu pillar and impede Cu atom replenishment from the bottom side. The remaining Cu pillar at the top is designed to be 3μm thick, which is intended to be fully consumed by 8μm Sn1.8Ag solder while simultaneously serving as redundant protection for the bottom Cu pillar against unexpected Sn spillage. The effects of high temperature storage (HTS) at 150°C on IMC evolution in CNCT microbump bonding were investigated for 1500hours. No significant voids were observed at the bonding interface during HTS. Interfacial positions recorded from 0 to 500hours show that the Cu3Sn IMC grows unidirectionally toward the Cu side but not toward the Sn side, indicating a greater diffusion flux of Sn atoms compared to Cu atoms. The diffusion coefficients of Cu in Cu3Sn (DCu,ε), Cu6Sn5 (DCu,η), and Sn in Cu3Sn (DSn,ε), Cu6Sn5 (DSn,η) at 150°C were calculated as 1.36×10-18m2/s, 5.01×10-19m2/s, 9.53×10-19m2/s and 1.10×10-18m2/s, respectively. The dramatic decrease of DCu,η suggests that the diffusion capacity of Cu atoms into Sn is significantly suppressed. The notable transformation of Cu3Sn to Cu6Sn5 occurred after 500hours. By 1500hours, Cu3Sn was greatly consumed, and the bonding interface tended to form a stable Cu/Ni/Cu6Sn5/Ni/Cu structure. Diffusion models were established and discussed to elucidate the mechanisms governing both stages.

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Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Fine-Pitch Cu-Sn Transient-Liquid-Phase Bonding Based on Reflow and Pre-Bonding

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

Optimization of Bonding Methods for Controlling Sn Spillage in Fine Pitch Microbump Applications

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Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Fabrication and Formation Principle of Porous Cu-Sn Bumps for Metal Bonding in Chiplet Integration

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Low-Temperature and Low-Pressure Fine-Pitch Micro Cu Bump Bonding Using Stress Migration of a Sputtering Ag Layer

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

A Cu/Ni/Cu/Sn1.8Ag Microbump Structure for Void-free Interface under Long Time High-Temperature Storage

Fabrication of Sn-plated Cu foam for high-efficiency transient-liquid-phase bonding

Interfacial Reaction and Mechanical Properties for Cu/Sn/Ag System Low Temperature Transient Liquid Phase Bonding

Novel transient liquid phase bonding through capillary action for high-temperature power devices packaging

Wafer-Level Hermetic Package by Low-Temperature Cu/Sn TLP Bonding with Optimized Sn Thickness

Effect of Powders on Microstructures and Mechanical Properties for Sn–Ag Transient Liquid Phase Bonding in Air