Abstract:In order to lower Cu-Cu bonding temperature and shorten bonding time applied for 3D integration, nanostructure has been introduced on bonding Cu surface. However, few studies have been reported on Nano Particles (NPs) formation by film deposition process such as pulsed laser deposition (PLD), which would be compatible with CMOS process. In this work Ag nanostructure containing strings of NPs was formed by optimized PLD process, which is mostly used for nanofilm deposition. Then NPs morphology was observed by scanning electron microscope (SEM) and transmission electron microscopy (TEM). Ag nanostructure was consisted of strings of loose mesh structures filled with NPs with size range from several milometers to tens of nanometcrs. They were compressible and of high movability, which was significantly benefit for lowering bonding temperature. With these Ag nanostructure on Cu pads, chips were pre-bonding at the low temperature of 180 degrees C for 5 min and afterwards all the chips were simultaneously annealed at the temperature of 200 degrees C for 25 min. After die shear test, average shear strength of 15.8 MPa was obtained and fracture surface was inspected by SEM. After TEM observation of bonding interface, continuous Cu-Ag-Cu interfaces with almost no void were observed. It confirmed low temperature Cu-Cu bonding with Ag nanostructure by PLD was a reliable and time-saving process, which might be a promising technology for 3D integration.

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Low Temperature Cu-Sn Bonding By Isothermal Solidification Technology

Fabrication of Sn-plated Cu foam for high-efficiency transient-liquid-phase bonding

Low-Temperature Copper Bonding Strategy with Graphene Interlayer

Low Temperature Fine-pitch Cu-Cu Bonding Using Au Nanoparticles As Intermediate

Interfacial Reaction and Mechanical Properties for Cu/Sn/Ag System Low Temperature Transient Liquid Phase Bonding

Fine-Pitch Cu-Sn Transient-Liquid-Phase Bonding Based on Reflow and Pre-Bonding

Low Temperature Cu-Cu Bonding Using Copper Nanoparticles Fabricated by High Pressure Pvd

Low temperature Cu bonding with large tolerance of surface oxidation

Low Temperature Cu/SiO2 Hybrid Bonding with Protruding Copper Pads

Low Temperature Cu-Cu Bonding Using Ag Nanoparticles By Pvd

Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films

Investigation of Low-Pressure Sn-Passivated Cu-to-Cu Direct Bonding in 3D-Integration

Experimental and computational investigation of low temperature Cu-Sn solid-state-diffusion bonding for 3D integration

Plasma Combined Self-Assembled Monolayer Pretreatment on Electroplated-Cu Surface for Low Temperature Cu–Sn Bonding in 3D Integration

Low-Temperature Cu-Cu Bonding Using Silver Nanoparticles Fabricated by Physical Vapor Deposition

Low-Temperature Transient Liquid Phase Bonding Technology via Cu Porous-Sn58Bi Solid–Liquid System under Formic Acid Atmosphere

Cu-Cu Bonding By Ag Nanostructure At Low Temperature Of 180 Degrees C

Low Temperature Al Based Wafer Bonding Using Sn As Intermediate Layer