Abstract:Future compact integration of microwave modules will require intermetallic bonding with pitch connections lower than 10 μm. Solid-liquid interdiffusion (SLID) bonding is a potential bonding method for close heterogeneous integration because of its bonding temperature in the range of solder bonding, its ability to withstand higher temperaturs than bonding and its moderate compatibility with the joining of rough surfaces. This paper presents the results of an investigation of the Au—Sn system for integration of A3B5 chips on wafer level using SLID bonding. A sequence of five layers of Au and Sn with weight ratios of about 3:2 was deposited on a sapphire substrate. The structure and phases of the obtained system were investigated before and after annealing. The initial system has five distinctive alternating layers with an overall thickness of around 4.5 μm. After heat treatment at 320 °C with a holding time of 10 minutes, the Au—Sn system transforms into one layer that consists of only one phase ζ (Au0.853Sn0.147). The homogenization process is completed in less than 10 minutes. The ζ phase, of which the system is composed after annealing, has a melting point of 522 °C, which ensures the high temperature stability of the bonding layer. Bonding using the formed system was conducted. Morphology, elemental composition, and the initial mechanical properties of bonded structures have been studied. There are two types of defects in the joint's cross section: voids and the presence of local interfaces between two surfaces (an unbonded-like line). EDX analysis of the cross section of the joint between two crystals shows that the average ratio of Sn to Au over the cross section of the joint is 10.7 %. The complex of studies conducted suggests that the bonding area mostly includes the ζ phase, which will provide the best mechanical strength characteristics among the phases with a high Au concentration. The average bond shear strength is 32 MPa. Initial robustness results of the bonding are promising for space applications.

Low Temperature Al Based Wafer Bonding Using Sn As Intermediate Layer

Investigations of Silicon Wafer Bonding Using Thin Al and Sn Films for Heterogeneous Integration

Bonding of Aluminum Coated Silicon Wafers Based on Polypropylene Carbonate and As a Multi-Functional Sensor

Aluminum-coated silicon wafer bonding with tin intermediate layer

Investigations of Silicon Wafer Bonding Utilizing Sputtered Al and Sn Films

Low Temperature Cu-Sn Bonding By Isothermal Solidification Technology

Mechanism and Process of Cu-Sn Bonding for Wafer Level MEMS Packaging

Low-temperature wafer-level bonding with cu-Sn-in solid liquid Interdiffusion for microsystem packaging

Ag-Sn Fluxless Wafer Bonding Technology

Low Temperature Au/Sn Solid-Liquid Diffusion Chip-to-Chip Bonding for MEMS Encapsulation

Low Temperature and Short Time Au/Sn Solid-liquid Diffusion Bonding for 3D Integration

Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals

A Ag-Sn Isothermal Solidification Technology For Fluxless Hermetic Wafer Bonding

Microstructure of AuSn Wafer Bonding for RF-MEMS Packaging

High-Temperature Mechanical Integrity of Cu-Sn SLID Wafer-Level Bonds

Room Temperature Bonding of Si and Si Wafers by Using Mo/Au Nano-Adhesion Layers

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Low Temperature Si/Si Wafer Direct Bonding Using a Plasma Activated Method

Wafer-Level Au—Sn Solid-Liquid Interdiffusion Bonding for Microwave Applications

Low Temperature Silicon Wafer‐to‐Wafer Bonding with Nickel Silicide

Low temperature direct bonding technology for wafer-scale integration and packaging