Abstract:Future compact integration of microwave modules will require intermetallic bonding with pitch connections lower than 10 μm. Solid-liquid interdiffusion (SLID) bonding is a potential bonding method for close heterogeneous integration because of its bonding temperature in the range of solder bonding, its ability to withstand higher temperaturs than bonding and its moderate compatibility with the joining of rough surfaces. This paper presents the results of an investigation of the Au—Sn system for integration of A3B5 chips on wafer level using SLID bonding. A sequence of five layers of Au and Sn with weight ratios of about 3:2 was deposited on a sapphire substrate. The structure and phases of the obtained system were investigated before and after annealing. The initial system has five distinctive alternating layers with an overall thickness of around 4.5 μm. After heat treatment at 320 °C with a holding time of 10 minutes, the Au—Sn system transforms into one layer that consists of only one phase ζ (Au0.853Sn0.147). The homogenization process is completed in less than 10 minutes. The ζ phase, of which the system is composed after annealing, has a melting point of 522 °C, which ensures the high temperature stability of the bonding layer. Bonding using the formed system was conducted. Morphology, elemental composition, and the initial mechanical properties of bonded structures have been studied. There are two types of defects in the joint's cross section: voids and the presence of local interfaces between two surfaces (an unbonded-like line). EDX analysis of the cross section of the joint between two crystals shows that the average ratio of Sn to Au over the cross section of the joint is 10.7 %. The complex of studies conducted suggests that the bonding area mostly includes the ζ phase, which will provide the best mechanical strength characteristics among the phases with a high Au concentration. The average bond shear strength is 32 MPa. Initial robustness results of the bonding are promising for space applications.

Microstructure of AuSn Wafer Bonding for RF-MEMS Packaging

Ag-Sn Fluxless Wafer Bonding Technology

Mechanism and Process of Cu-Sn Bonding for Wafer Level MEMS Packaging

Microstructural Characterization and Mechanical Performance of Wafer-Level SLID Bonded Au-Sn and Cu-Sn Seal Rings for MEMS Encapsulation

Microstructure Of Ag-Sn Bonding For Mems Packaging

Microstructure Characterization and Interfacial Reactions between Au-Sn Solder and Different Back Metallization Systems of GaAs MMICs

Wafer-Level Au—Sn Solid-Liquid Interdiffusion Bonding for Microwave Applications

Investigation of Au/Si Eutectic Wafer Bonding for MEMS Accelerometers

Low Temperature Au/Sn Solid-Liquid Diffusion Chip-to-Chip Bonding for MEMS Encapsulation

Low Temperature Al Based Wafer Bonding Using Sn As Intermediate Layer

A Method for Fast Au-Sn Bonding at Low Temperature Using Thermal Gradient

Low-temperature wafer-level bonding with cu-Sn-in solid liquid Interdiffusion for microsystem packaging

A Ag-Sn Isothermal Solidification Technology For Fluxless Hermetic Wafer Bonding

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Microstructure Ofag-Snbonding Formems Packaging

High-Temperature Stable Au–Sn and Cu–Sn Interconnects for 3D Stacked Applications

Low Temperature Cu-Sn Bonding By Isothermal Solidification Technology

Wafer Lever Packaging for Gyroscope by Au/Si Eutectic Bonding

Elemental composition optimization to achieve eutectic Au–Sn solder

A Cu Pillar Bump Bonding Method Using Au-Sn Alloy Cap as the Interconnection Layer

Low Temperature and Short Time Au/Sn Solid-liquid Diffusion Bonding for 3D Integration