Mechanism and Process of Cu-Sn Bonding for Wafer Level MEMS Packaging

Rong Yibo,Cai Jian,Wang Shuidi,Jia Songliang
DOI: https://doi.org/10.3969/j.issn.1003-353x.2009.12.008
2009-01-01
Abstract:A new wafer bonding technique was described based on Cu-Sn isothermal solidification(IS) technology for MEMS wafer-level packaging.Based on equilibrium phase diagram of Cu-Sn alloy,the structure of the intermediate multi-layers and bonding patterns were designed,and the bonding process was optimized.Bonding layer which was almost void-free,with a melting point of 415 ℃,were successfully made at 250 ℃.The bonding layer can meet the requirements of the shear strength test specified by GJB548B-2005.The results show that the Cu-Sn IS technology has great potential of application.
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