A Ag-Sn Isothermal Solidification Technology For Fluxless Hermetic Wafer Bonding

LI Xiao-gang,CAI Jian
DOI: https://doi.org/10.3969/j.issn.1004-4507.2007.09.010
2007-01-01
Abstract:A new bonding system, Ag-Sn, as the bonding media for wafer level packaging is investigated. Comparing to well developed Au-Sn bonding (typically bonding temperature of 280 ℃), Ag-Sn would provide a lower cost and higher de-bonding temperature wafer-level bonding method. Cap wafer was sputtered with thin films of Ti/Ni/Sn/Au and to form the pattern with the lift-off process. Ti/Ni/Ag was sputtered on substrate wafer. After the metallization the cap wafer and substrate wafer were brought into contact and sent into the bonder. Bonding process was performed in a nitrogen environment and no flux is used. Different bonding parameters such as bonding force and bonding temperature are studied. The average shear strength of 55.17MPa was achieved. TMA indicates the de-bonding temperature is about 500℃. Very good hermeticity was proved by He leakage test.
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