Experimental and computational investigation of low temperature Cu-Sn solid-state-diffusion bonding for 3D integration

Jian Cai,Junqiang Wang,Qian Wang
DOI: https://doi.org/10.1016/j.mee.2020.111479
IF: 2.3
2021-01-01
Microelectronic Engineering
Abstract:Three critical experiments, including Sn interlayer thickness optimization, interfacial IMC growth evolution, and bump size effect, have been conducted for low temperature Cu-Sn solid-state-diffusion (SSD) bonding. The minimum thickness of Sn interlayer was firstly optimized to shorten the bonding time through surface and interface analysis. During bonding and annealing processes for sandwich-structured Cu/Sn/Cu interconnection, Sn interlayer exhausting and intermetallic compounds (IMCs) transforming were then investigated detailly. The growth mechanism of Cu6Sn5 and Cu3Sn in low temperature Cu-Sn bonding was still controlled by lattice diffusion. However, Cu6Sn5 growth inhibited Cu3Sn growth when Sn existed. Finally, a stable three-layer structure of Cu/Cu3Sn/Cu could form at bonding interface. Also, bump size effect due to IMC lateral growth have been demonstrated for fine-pitch interconnection. It is concluded these investigations would facilitate the application of low temperature Cu-Sn SSD bonding for high-density 3D integration.
What problem does this paper attempt to address?