Abstract:The combined effects of thermomigration (TM) and electromigration (EM) were investigated in Cu/Sn3.0Ag0.5Cu/Ni solder joints by applying a 5×103A/cm2 DC current to the joints. With a thermal gradient, the Cu atoms and Ni atoms were found to migrate towards the lower temperature side while the Sn atoms were found to migrate towards the higher temperature side. For the solder joint stressed with a 5×103A/cm2 DC current, TM was found to play a dominant effect on the migration of Cu atoms in the solder because the Cu atomic flux in the solder which was induced by EM was smaller than that was induced by TM. The Ni atomic flux in the solder that was induced by TM was smaller than that induced by EM, but it could not be ignored because the values were the same order of magnitude. The Sn atomic flux induced by TM could be ignored due to its smaller magnitude than that induced by EM. The Cu3Sn IMC layer and Cu6Sn5 IMC layer at the Cu/solder interface in the joint with Cu as the anode were thicker than corresponding layers at the Cu/solder interface in the joint with Cu as the cathode. The IMC at the Ni/solder interface of joint with Cu as the anode was the Ni3Sn4 phase while that in the solder joint with Cu as the anode was the (Cu,Ni)6Sn5, and the former was thicker than the latter. EM and TM induced dissolution of the Ni3Sn4 IMC into the solder was found to be the main cause of the formation of voids at the Ni3Sn4/solder interface from a joint that used Cu as the anode. For the solder joint that used Cu as the anode, the Ni3Sn4 IMC layer at the Ni/solder interface was as thick as the Cu-Sn IMC layer at the Cu/solder interface. By contrast, for the solder joint that used Cu as the cathode, the IMC layer at the Ni/solder interface was thinner than that at the Cu/solder interf- - ace.

Effects of Current Stress for Low Temperature Cu/Sn/Cu Solid-State-Diffusion Bonding

Experimental and computational investigation of low temperature Cu-Sn solid-state-diffusion bonding for 3D integration

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect

The Effect Of Cu Orientation On Fracture Location In Cu3sn-Cu Interface Structure Under Monotonic Loading Condition By Molecular Dynamics Simulation

Effect of Bonding Strength on Electromigration Failure in Cu–Cu Bumps

Investigation of Stress Evolution at the Interface of Cu/Sn3.0Ag0.5Cu/Cu Solder Joint during Electromigration

Effects of electromigration on interfacial reactions in cast Sn/Cu joints

Investigation of Stress Evolution Induced by Electromigration in Sn-Ag-Cu Solder Joints Based on an X-Ray Diffraction Technique

The Effect of Cu Orientation on Fracture Location in Cu<inf>3</inf>Sn-Cu Interface Structure Under Monotonic Loading Condition by Molecular Dynamics Simulation

Effect of intermetallic on electromigration and atomic diffusion in Cu/SnAg 3.0Cu 0.5/Cu joints: Experimental and first-principles study

Numerical Simulation of the Atomic Migration and Diffusion During Current Stressing in the Cu/Sn-58bi/Cu Solder Joints

The Effect of Pressure and Orientation on Cu-Cu3Sn Interface Reliability under Isothermal Ageing and Monotonic Traction Via Molecular Dynamics Investigation

Electromigration in Cu-Cored Sn-3.5Ag-0.7Cu Solder Interconnects under Current Stressing

Electromigration and Thermomigration in Sn3Ag0.5Cu Solder Joints

Low Temperature and Short Time Au/Sn Solid-liquid Diffusion Bonding for 3D Integration

Current-induced solder evolution and mechanical property of Sn-3.0Ag-0.5Cu solder joints under thermal shock condition

In Situ Measurement of Stress Evolution in Sn-based Solder Joint under Electromigration Based on X-ray Diffraction Technique

Electromigration Reliability of Cu3Sn Microbumps for 3D Heterogeneous Integration

Interfacial Reaction and Mechanical Properties for Cu/Sn/Ag System Low Temperature Transient Liquid Phase Bonding

Low Temperature Cu-Sn Bonding By Isothermal Solidification Technology