Abstract:The combined effects of thermomigration (TM) and electromigration (EM) were investigated in Cu/Sn3.0Ag0.5Cu/Ni solder joints by applying a 5×103A/cm2 DC current to the joints. With a thermal gradient, the Cu atoms and Ni atoms were found to migrate towards the lower temperature side while the Sn atoms were found to migrate towards the higher temperature side. For the solder joint stressed with a 5×103A/cm2 DC current, TM was found to play a dominant effect on the migration of Cu atoms in the solder because the Cu atomic flux in the solder which was induced by EM was smaller than that was induced by TM. The Ni atomic flux in the solder that was induced by TM was smaller than that induced by EM, but it could not be ignored because the values were the same order of magnitude. The Sn atomic flux induced by TM could be ignored due to its smaller magnitude than that induced by EM. The Cu3Sn IMC layer and Cu6Sn5 IMC layer at the Cu/solder interface in the joint with Cu as the anode were thicker than corresponding layers at the Cu/solder interface in the joint with Cu as the cathode. The IMC at the Ni/solder interface of joint with Cu as the anode was the Ni3Sn4 phase while that in the solder joint with Cu as the anode was the (Cu,Ni)6Sn5, and the former was thicker than the latter. EM and TM induced dissolution of the Ni3Sn4 IMC into the solder was found to be the main cause of the formation of voids at the Ni3Sn4/solder interface from a joint that used Cu as the anode. For the solder joint that used Cu as the anode, the Ni3Sn4 IMC layer at the Ni/solder interface was as thick as the Cu-Sn IMC layer at the Cu/solder interface. By contrast, for the solder joint that used Cu as the cathode, the IMC layer at the Ni/solder interface was thinner than that at the Cu/solder interf- - ace.

Numerical Simulation of the Atomic Migration and Diffusion During Current Stressing in the Cu/Sn-58bi/Cu Solder Joints

Investigation of Stress Evolution at the Interface of Cu/Sn3.0Ag0.5Cu/Cu Solder Joint during Electromigration

Investigation of Stress Evolution Induced by Electromigration in Sn-Ag-Cu Solder Joints Based on an X-Ray Diffraction Technique

In Situ Measurement of Stress Evolution in Sn-based Solder Joint under Electromigration Based on X-ray Diffraction Technique

Electromigration in Cu-Cored Sn-3.5Ag-0.7Cu Solder Interconnects under Current Stressing

Bi Layer Formation at the Anode Interface in Cu/Sn-58Bi/Cu Solder Joints with High Current Density

Effect of Cu on the diffusion behavior of Bi in Sn matrix during electromigration

Experimental and multiphysics simulation study of atoms migration and morphology evolution in solder joints under high current density

Microstructural evolution of joints with and without Sb, Ni in Sn58Bi solder under electro-thermal-force coupling

Changes in the Microstructure and Electrical Resistance of SnBi-Based Solder Joints during Current Stressing

Effects of Current Stress for Low Temperature Cu/Sn/Cu Solid-State-Diffusion Bonding

A Molecular Dynamics Investigation of the Effect of Pressure and Orientation on the Cu Consumption in Cu-Cu3Sn Interface under Isothermal Ageing and Its Dissipative Mechanisms during Traction

Synergistic effect of thermomigration and electric current stressing on damping capacity of Sn58Bi solder

Effect of intermetallic on electromigration and atomic diffusion in Cu/SnAg 3.0Cu 0.5/Cu joints: Experimental and first-principles study

An in-situ experimental and simulation study on the electromigration behavior of SAC305 solder joints

The Effect of Bi Addition on the Electromigration Properties of Sn-3.0Ag-0.5Cu Lead-Free Solder

Electromigration and Thermomigration in Sn3Ag0.5Cu Solder Joints

Experimental and Numerical Studies of Stress Migration in Cu Interconnects Embedded in Different Dielectrics

The Effect of Pressure and Orientation on Cu-Cu3Sn Interface Reliability under Isothermal Ageing and Monotonic Traction Via Molecular Dynamics Investigation

Reliability Study of Fine Pitch Cu-Sn Micro-Bump Structure Electromigration Test by Finite Element Simulation

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects