Abstract:High density, fine pitch wafer level bonding technology is necessary for heterogeneous integration. However, underfill would be a challenging when bonding pitch decreases. Hybrid bonding technology with metal-to-metal and passivation-to-passivation bonding simultaneously was considered as a feasible solution. In this work, a hybrid bonding scheme with asymmetric embedded Cu-Sn/Cu bumps structure was investigated. Photosensitive BCB used as passivation materials was coated on only one side of bonding pairs. This asymmetric structure allows for precise alignment. BCB curing and Cu-Sn Solid-liquid-diffusion bonding were both achieved under the temperature of 250°C. The thickness of BCB and metal was concisely designed considering the volume shrinking of polymer during bonding process. To achieve void free hybrid bonding interface, efforts were mainly paid to some key aspects. Surface pre-treatment were firstly introduced to ensure no oxidation and residual polymer on the surface of bumps before bonding. A combination of plasma and formic gas treatment were adopted. Furthermore, considering coefficients of thermal expansion (CTE) mismatch of BCB and embedded bumps, a compatible bonding process with well-matched temperature and stress was proposed and optimized to get a void-free bonding interface under the guidance of independent variable test result. Bonding interface microstructure was observed and mechanical test, electrical test of Kelvin and daisy-chain structure were performed to evaluate bonding quality, also reliability test which included HTST and TCT had been carried out. The results confirmed that embedded bump hybrid bonding would be a convincing technology for future 3D integration.

Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Low Temperature Cu-Cu Bonding Using an Intermediate Sacrificial Sn Layer

Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Low-Temperature and Low-Pressure Fine-Pitch Micro Cu Bump Bonding Using Stress Migration of a Sputtering Ag Layer

Transient-Liquid-Phase Bonding of Granulated Cu–Sn Bumps with a 4-Μm Fine Pitch

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Fabrication and Formation Principle of Porous Cu-Sn Bumps for Metal Bonding in Chiplet Integration

Interfacial Morphology and Grain Orientation During Bumpless Direct Cu Bonding

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Cu–Cu Bonded Microbump Interconnects with a 10- $\mu$ M Pitch for 3-D-stacked Chiplets

Low Temperature Cu-Cu Bonding Using Copper Nanoparticles Fabricated by High Pressure Pvd

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

Interfacial Characterization of Low-Temperature Cu-to-Cu Direct Bonding with Chemical Mechanical Planarized Nanotwinned Cu Films

Low temperature Cu bonding with large tolerance of surface oxidation

Low Temperature Fine-pitch Cu-Cu Bonding Using Au Nanoparticles As Intermediate

Low Temperature Cu-Cu Bonding Using Ag Nanoparticles By Pvd

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Low Temperature Cu/SiO2 Hybrid Bonding with Protruding Copper Pads

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Low Temperature Fine-Pitch Wafer-Level Cu-Cu Bonding Using Nanoparticles Fabricated by PVD

3D Integration via D2D Bump-Less Cu Bonding with Protruded and Recessed Topographies