Abstract:Microbumps play a crucial role in interlayer interconnections for advanced packaging. Among the prevalent microbump structures are Cu/Sn and Cu/Ni/Sn configurations. However, as the bump size continues to shrink, excessive Kirkendall voids tend to form in Cu/Sn microbumps, leading to potential reliability issues. While Cu/Ni/Sn structures can suppress Kirkendall void formation, Ni3Sn4 intermetallic compound (IMC) exhibits inferior physical properties compared to Cu3Sn and Cu6Sn5. In this study, a novel Cu/Ni/Cu/Sn1.8Ag (CNCT) Sn-rich microbump structure with controlled Cu thickness is proposed to suppress Kirkendall void formation while promoting Cu6Sn5 and Cu3Sn as interfacial IMCs. A Ni barrier layer is inserted to partition the Cu pillar and impede Cu atom replenishment from the bottom side. The remaining Cu pillar at the top is designed to be 3μm thick, which is intended to be fully consumed by 8μm Sn1.8Ag solder while simultaneously serving as redundant protection for the bottom Cu pillar against unexpected Sn spillage. The effects of high temperature storage (HTS) at 150°C on IMC evolution in CNCT microbump bonding were investigated for 1500hours. No significant voids were observed at the bonding interface during HTS. Interfacial positions recorded from 0 to 500hours show that the Cu3Sn IMC grows unidirectionally toward the Cu side but not toward the Sn side, indicating a greater diffusion flux of Sn atoms compared to Cu atoms. The diffusion coefficients of Cu in Cu3Sn (DCu,ε), Cu6Sn5 (DCu,η), and Sn in Cu3Sn (DSn,ε), Cu6Sn5 (DSn,η) at 150°C were calculated as 1.36×10-18m2/s, 5.01×10-19m2/s, 9.53×10-19m2/s and 1.10×10-18m2/s, respectively. The dramatic decrease of DCu,η suggests that the diffusion capacity of Cu atoms into Sn is significantly suppressed. The notable transformation of Cu3Sn to Cu6Sn5 occurred after 500hours. By 1500hours, Cu3Sn was greatly consumed, and the bonding interface tended to form a stable Cu/Ni/Cu6Sn5/Ni/Cu structure. Diffusion models were established and discussed to elucidate the mechanisms governing both stages.

Fabrication and Formation Principle of Porous Cu-Sn Bumps for Metal Bonding in Chiplet Integration

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

Low-Temperature and CMP-Free Direct Bonding of Porous Cu Bumps

Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Transient-Liquid-Phase Bonding of Granulated Cu–Sn Bumps with a 4-Μm Fine Pitch

Optimization of Bonding Methods for Controlling Sn Spillage in Fine Pitch Microbump Applications

Cu–Cu Bonded Microbump Interconnects with a 10- $\mu$ M Pitch for 3-D-stacked Chiplets

Grain modification and formation of tough IMC phase in submicron Sn–Ag microbumps via doping Zn and Ni in Cu substrate

Low-Temperature Ultrasonic Bonding of Cu/Sn Microbumps with Au Layer for High Density Interconnection Applications

Surface protrusion induced by inter-diffusion on Cu-Sn micro-pillars

Fine-Pitch Cu-Sn Transient-Liquid-Phase Bonding Based on Reflow and Pre-Bonding

Development of Hybrid Bonding Process for Embedded Bump with Cu-Sn/BCB Structure

Effect of Ag addition on the mechanical properties of Cu/Ni/Sn/Ni/Cu microbump with a sub-10 micron bump thickness

A Cu/Ni/Cu/Sn1.8Ag Microbump Structure for Void-free Interface under Long Time High-Temperature Storage

Fabrication of Pb/Sn Bumps

Research on Ni3Sn4 Intermetallic Compound for 5 M Diameter Cu/Ni/Sn-3.0Ag Micro Bumps

Fabrication of High‐Density Micro‐Bump Arrays for 3D Integration of MEMS and CMOS

Nucleation and growth of Cu6Sn5 during the aging process of Cu/Sn interface in electronic packaging-by in-situ TEM

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Experimental and computational investigation of low temperature Cu-Sn solid-state-diffusion bonding for 3D integration