Fabrication of Pb/Sn Bumps

刘豫东,谭智敏,钱志勇,马莒生

DOI: https://doi.org/10.3969/j.issn.1001-2028.2002.09.002

2002-01-01

Abstract:Presented is the technology for fabricating Pb/Sn by electric plating, including bump design, disk-preparation, UBM-sputtering, whirl coating photoengraving, Cu stalk plating, Pb/Sn plating, bump-reflowing, etc. The results show that semi-sphere shaped Pb/Sn bumps can be obtained by whirl coating of 50μm.

What problem does this paper attempt to address?

Fine Pitch and High Density Sn Bump Fabrication

Jinglin Bi,Jin Jiang,Anmin Hu,Ming Li,Dali Mao,Tadatomo Suga

DOI: https://doi.org/10.1109/icept.2009.5270546

2009-01-01

Abstract:Three-dimensional packaging technology, which requires fine pitch and high density of solder bumps, has been developed recently for system-in-package applications. There are several methods being used for solder bumping process for now. As the sphere pitch decreases to below 100 mum, electrodepositing has an advantage over robotic ball placement and screen printing in the cost per ball, according to the study done by ROHM HAAS electronic materials. The current environmentally conscious manufacturing moves toward Pb-free schemes for electronic devices and components. Sn- Ag and Sn-Cu alloy system is an acknowledged candidate among Pb-free solders. However, it is difficult to fabricate alloy-plated bumps. In this paper, the fabrication of lead-free bumps made of pure-tin, as a basic study, is described. Area-array tin solder bumps each of size 60 mum diameter on an 180 mum pitch with very tight height variation were obtained. In addition, tin bumps can also be applied in a new chip-to-chip interconnection method, in which bonding between the chips is achieved by deformation-injection of tin stud bump on a chip into the through via hole in the other chip. SEM was used to observe the microstructure of tin bumps. At last, the reflow was carried out in a glycerol bath in order to get a high quality of the solder bumps.
Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Yunfan Shi,Zilin Wang,Qian Wang,Zheyao Wang

DOI: https://doi.org/10.1109/estc60143.2024.10712009

2024-01-01

Abstract:Cu-Cu thermocompression bonding and Cu-Sn-Cu transient-liquid-phase (TLP) bonding are the mainstream metal bonding technologies to electrically connect the vertically stacked chips/wafers in 3D/2.5D integration. Compared with Cu-Cu thermocompression bonding which needs chemical mechanical polishing (CMP), Cu-Sn-Cu TLP bonding is CMP-free and can be realized at low temperature and low pressure. Shrinkage of the Cu-Sn bumps significantly increases the surface to volume ratios, and some related characteristics that are insignificant for 50 μm bumps become dominant in 5 μm bumps, such as remarkable Sn volatilization, fast Sn consumption during heating, and serious bump undercut during seed layer etching. In this paper, we report the fabrication of small Cu-Sn bumps with a diameter of 5 μm as well as the bonding results.
Formation of SnAg Solder Bump by Multilayer Electroplating

Qinghua Zhao,Zhuo Chen,Anmin Hu,Ming Li

DOI: https://doi.org/10.1016/j.mee.2013.01.055

IF: 2.3

2013-01-01

Microelectronic Engineering

Abstract:A novel method, multilayer electroplating, was proposed to prepare alloy bumps. It consists to electroplating different structural elements of alloys sequentially and then forming uniform alloy through reflowing. The formation of eutectic SnAg alloy bumps was taken as an example to verify the applicability of the method in this study.Near-eutectic SnAg solder bumps were formed successfully through multilayer electroplating. After reflowing for 1 min at 250 degrees C, SnAg alloy with homogeneous structure and composition was obtained from multilayer structure. Fine Ag3Sn particles with uniform distribution were precipitated inside the solder and Cu6Sn5 intermetallic compounds (IMCs) in scallop-like shape formed at the SnAg solder/Cu interface. As reflow time increasing, the morphology of Ag3Sn remained unchanged but the thickness of Cu6Sn5 layer increased. The characteristic of multilayer electroplated SnAg solder bumps was similar to that of traditional alloy, which indicated that it was a suitable method to form SnAg alloy solder bumps. (c) 2013 Elsevier B.V. All rights reserved.
Fabrication and Formation Principle of Porous Cu-Sn Bumps for Metal Bonding in Chiplet Integration

Zilin Wang,Ziqing Wang,Yunfan Shi,Qian Wang,Zheyao Wang

DOI: https://doi.org/10.1109/tcpmt.2024.3485112

2024-01-01

Abstract:We have developed porous Cu-Sn bumps by treating conventional Cu-Sn bumps with a gas mixture of oxygen and formic acid for fine-pitch Cu-Sn bonding and low-temperature Cu-Cu bonding. However, the formation mechanisms of the porous Cu-Sn bumps are still unclear and the fabrication processes are not optimized. This paper presents a chemical model for the formation of the porous Cu-Sn bumps. Controlled experiments are performed to investigate the influences of some key factors, such as the temperature and the duration of redox treatment, the gas composition, and the bump sizes. It is found that the formation of porous Cu-Sn bumps is associated with the sequential oxidation and reduction of the Cu-Sn intermetallic compounds (IMCs) as well as the thermal decomposition of their reaction products. Based on these results, a chemical model is proposed for the formation of porous Cu-Sn bumps, which provides deep insights to the reactions and the guidelines for optimizing the porous Cu-Sn bumps.
Wetting behavior of electrolyte in fine pitch Cu/Sn bumping process by electroplating

Jin Jiang,Jinglin Bi,Zhuo Chen,Ming Li,Dali Mao,Tadatomo Suga

DOI: https://doi.org/10.1109/ICEPT.2009.5270628

2009-01-01

Abstract:This work reports on the wetting behavior of electrolyte in fine pitch Cu/Sn bumping process by electroplating. Three methods containing adding complex wetting agent to electrolyte, plasma treatment to photo-resist and ultrasonic vibration were taken to improve the wettability between electrolyte and related materials. Contact angles of electrolyte containing different amount of complex wetting agent with sputtered copper and photo-resist, before and after plasma treatment, were measured respectively. Certain amount of wetting agent can decrease the contact angles of photo-resist with electrolyte by nearly 20deg, and wettability of photo-resist was further enhanced by plasma treatment that makes the contact angles decrease by about 40deg. The contact angle of sputtered copper and electrolyte can be decreased by nearly 10deg. SEM observations of cross sections and top view of bumps revealed that complex wetting agent help electrolyte get to the bottom of patterned figure quickly. In tin bumping process, this is the last step of wetting behavior for the bubbles in patterned figure would be discharged in electroplating process. While in copper bumping process, ultrasonic vibration was used to help remove the bubbles for the bubbles cannot be small enough by surface tension to overcome the adhesion effect of sidewall. Copper and tin bumps with a diameter of 60 mum, height of 60 mum and pitch of 180 mum were fabricated by rational use of methods above.
Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

Yunfan Shi,Zilin Wang,Rutian Huang,Jin Kang,Kai Zheng,Weihai Bu,Zheyao Wang

DOI: https://doi.org/10.1109/ectc51909.2023.00152

2023-01-01

Abstract:Transient-liquid-phase (TLP) Cu-Sn bonding is an attractive method for fabrication of intra-chip connects in 3-D and chiplet applications due to the ease of manufacturing and low cost. With the continuous increase in the interconnect densities, it is highly desired to shrink the Cu-Sn bump diameters to 5 mu m or less from the current mainstream 20 similar to 30 mu m. However, small Cu-Sn bumps shows significant difference from large ones because some surface related properties that are insignificant for large bumps become dominant for small ones. This paper reports the differences between bonding of large and small Cu-Sn bumps, such as surface oxidation and bump undercut, and proposes the methods to address these problems. By optimizing the bonding processes, TLP bonding of Cu-Sn bumps with a 5 mu m diameter has been successfully achieved.
Transient-Liquid-Phase Bonding of Granulated Cu–Sn Bumps with a 4-Μm Fine Pitch

Yunfan Shi,Zilin Wang,Huawei Zhang,Jin Kang,Kai Zheng,Weihai Bu,Zheyao Wang

DOI: https://doi.org/10.1109/ted.2022.3227895

IF: 3.1

2023-01-01

IEEE Transactions on Electron Devices

Abstract:It is difficult for Cu–Sn transient-liquid-phase (TLP) bonding to achieve fine bump pitches because liquid Sn extrudes laterally under bonding pressure and may cause electrical short of adjacent bumps. To solve this problem, this article reports a new Cu–Sn bonding method that uses granulated Sn layers instead of conventional continuous Sn layers. To form Sn granules, a reflow method is developed by exploiting a new phenomenon that sequential oxidation and reduction of melted Sn changes it to granulated structures. During Cu–Sn bonding, the granulated Sn allows fast Cu diffusion and rapid Cu–Sn reaction, which consumes Sn quickly and avoids liquid Sn extrusion. The Cu–Sn reaction forms intermetal compounds (IMCs) with a coral-like structure and large porosity, further alleviating the Sn extrusion by accommodating the melted Sn. Using this method, fine-pitch Cu–Sn bump bonding with a $2.9~\mu \text{m}$ diameter and a $4~\mu \text{m}$ pitch has been successfully achieved with high bonding yield and low resistivity.
Research of gold bump for wafer level package

王水弟,蔡坚,谭智敏,胡涛,郭江华,贾松良

DOI: https://doi.org/10.3969/j.issn.1003-353X.2004.04.017

2004-01-01

Abstract:A method of Au bump fabrication has been studied for wafer level packaging. Theprocess flow of the bumping using electroplating is described. UBM sputtering, thick photoresistlithography and thick Au electroplating are investigated. UBM system of TiW/Au is selected andoptimal process of thick photoresist lithography is got after experiments. A fountain-plating ma-chine has been developed for wafer level Au bumping. Studies on the parameter of electroplating arealso performed with different plating solutions and photoresist systems. A comparison between Aubumps fabricated and those of other vendors is made, which indicates the fabricated bumps could beused for application.
Electroless Deposition of Nickel Microbumps for Fine-Pith Flip-Chip Bonding

Yu Lu,Chang Lin,Shuaishuai Wang,Kaixin Zhang,Taifu Lang,Yang Li,Qiwei Li,Tianxi Yang,Zhonghang Huang,Chunli Yan,Jie Sun,Qun Yan

DOI: https://doi.org/10.1088/1742-6596/2783/1/012022

2024-01-01

Journal of Physics Conference Series

Abstract:The reliability of micro-light-emitting diode (Micro-LED) is closely associated with the uniformity of microbumps arrays. With continual decreases in pixel pitch in recent years, it is a challenge to guarantee the uniformity of bump arrays. To satisfy current requirements for ultra-high-density interconnections, this study proposes an electroless plating method for fabricating highly uniform nickel microbumps. This technique differs from electroplating, in which the morphology and consistency of microbumps can be easily controlled. Furthermore, it is a high-selectivity and cost-effective method of microbumps fabrication that eliminates solder wastage and avoids metal lift-off in traditional evaporation. To minimize the non-uniformity of the bumps, we aim to optimize the oxygen plasma treatment parameters and deposition intervals to eliminate the issues of skip plating, hydrogen bubble entrapment, and nodules. Under the combined effect of plasma treatment and intermittent deposition method, microbump arrays with less than 5% uniformity were successfully prepared, achieving the demands of high-density bonding. In addition, the preparation process is highly reproducible, extending the application range of this technique.
Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

Yunfan Shi,Zilin Wang,Jin Kang,Kai Zheng,Weihai Bu,Zheyao Wang

DOI: https://doi.org/10.1109/tcpmt.2022.3213540

2022-01-01

Abstract:Copper–tin (Cu–Sn) transient liquid-phase (TLP) bonding has attractive advantages and has been widely used in three-dimensional (3-D) integration to establish electrical connections between stacked chips. However, TLP bonding has technical difficulties in bonding Cu–Sn bumps with small diameters and fine pitches due to the bonding pressure-induced lateral extrusion of the melted Sn layer. As bonding of micro bumps with diameters smaller than 5 $\mu \text{m}$ is highly desired in future applications, this article reports the TLP bonding of micro bumps using improved reflow and pre-bonding. Due to the large surface-to-volume ratio of micro bumps, the reflow conditions dramatically influence the reflow characteristics, and systematical investigations are performed such that an Sn layer with an optimal thickness has been obtained to avoid lateral extrusion. A new bonding scheme has been developed by combining a solid-state pre-bonding and a TLP final bonding. The new bonding method and the Sn thickness control reflow avoid liquid Sn extrusion under bonding pressure. Using these techniques, Cu–Sn bonding of bumps with a diameter down to 5 $\mu \text{m}$ has been successfully achieved with a high bonding yield.
A Sn3Ag–CoSn3 Composite Copper Pillar Bump for Three-Dimensional Packaging

JinTao Wang,YiNi Chen,ZiWen Lv,XiaoYu Han,ZiHan Pan,Feng Tian,MingYuan Zhao,HongBo Xu,GaoLiang Peng,HongTao Chen,MingYu Li

DOI: https://doi.org/10.1016/j.jmrt.2024.11.063

IF: 6.267

2024-01-01

Journal of Materials Research and Technology

Abstract:Copper pillar bumps are widely utilized in advanced packaging technologies, representing a crucial foundation for 3D packaging. However, the mechanical properties of Sn3Ag bumps on copper columns often fall short of meeting increasingly demanding service conditions. Additionally, the loss of effectiveness due to excessive growth of intermetallic compounds at the interface needs to be addressed. To enhance the Sn₃Ag bumps and inhibit the excessive growth of intermetallic compounds, CoSn₃ nanocrystals were prepared, and Sn₃Ag–CoSn₃ composite copper pillar bumps were fabricated through composite electroplating. Upon reflowing, the CoSn3 nanocrystals decomposed, resulting in a significant formation of (Cu,Co)6Sn5 nanoparticles within the Sn3Ag matrix. The (Cu,Co)6Sn5 nanoparticles not only strengthen the solder joints by pinning, but also significantly reduced the excessive growth of interfacial intermetallic compounds, ultimately improving the service performance and reliability of the solder joints.
The Evolution of Interfacial Microstructure of Sn3.5Ag Solder Bump with Cu Under-Bump Metallization

Jinglin Bi,Anmin Hu,Ming Li,Dali Mao

DOI: https://doi.org/10.1109/icept.2011.6066855

2011-01-01

Abstract:Low cost electrodeposited Sn3.5Ag solder bumps fabrication technology was developed for three-dimensional packaging applications. Effect of reflow time on interfacial reaction of electroplated Sn3.5Ag solder bumps with Cu under-bump metallization (UBM) was investigated. The microstructure of eutectic Sn3.5Ag is composed of β-Sn phase and Ag3Sn IMCs in the solder region. At the interface between solder and Cu, scallop-like Cu-Sn IMCs were formed toward solder region and were identified as Cu6Sn5 IMCs by compositional measurement of EDX. XRD measurement identified that Cu6Sn5 and Ag3Sn formed after reflowing for lmin, and as the reflow time extended the quantity of Ag3Sn almost remained the same while the quantity of Cu6Sn5 increased. No Cu3Sn was detected, even after reflowing for 20min. EDX analysis was consistent with the XRD result.
Electroless Deposition of 4 μm High Ni/Au Bumps for 8 μm Pitch Interconnection

Liang Tian,Chang Lin,Kui Pan,Yu Lu,Liying Deng,Zhonghang Huang,Tianxi Yang,Yongai Zhang,Jie Sun,Qun Yan

DOI: https://doi.org/10.1021/acsaelm.2c00974

IF: 4.494

2022-10-04

ACS Applied Electronic Materials

Abstract:We propose that electroless plating is a superb approach to preparing metallic bumps with an ultrafine pitch for the integration of a micro light-emitting diode (micro-LED). Electroless plating does not suffer from lift-off-related issues, which are ubiquitous in thermal evaporation. Besides, it can result in much more uniform bumps than electroplating because the bump height is not affected by the current distribution. This study reports ultrafine pitch Ni/Au bumps fabricated by electroless nickel immersion gold (ENIG) plating. Furthermore, cheap metals iron and nickel are selected to catalyze the electroless nickel process. The results indicate that uniform and consistent Ni/Au bumps can be obtained through the iron sheet and nickel layer method. Besides, no voids and impurities are found inside the bumps, which is beneficial for the following interconnection process. Moreover, the change in Ni bump height values with the electroless plating time is also provided.

materials science, multidisciplinary,engineering, electrical & electronic
Investigation of Interfacial Reaction Between Eutectic Sn–Pb Solder Droplet and Au/Ni/Cu Pad

F. Q. Li,C. Q. Wang,Y. H. Tian

DOI: https://doi.org/10.1179/174328406x86092

IF: 1.8

2008-01-01

Materials Science and Technology

Abstract:The basic process of molten droplet solder bumping and interfacial reaction between molten Sn–Pb droplet and Au/Ni/Cu under bump metallurgy (UBM) pad was investigated in the present paper. The morphology of intermetallic compounds was strongly influenced by the initial temperature of the solder droplet. When the initial temperature 350°C was reached, a continuous AuSn2 and needle like AuSn4 were formed at the solder bump/pad interface. When the initial temperature 450°C was reached, all the AuSn2 converted into AuSn4. Rod like AuSn4 grew strongly, some acicular AuSn4 was distributed inside the solder near the interface. Under the condition that the substrate was preheated, interfacial reaction is more intensive at the molten stage. Results of the calculation have shown that compared with the initial height of droplet, the contact temperature is mainly dependent on the initial temperature. To elucidate intermetallic formation mechanism at the interface, the pad/solder temperature field was analysed using finite element method (FEM).
Effect of Electroplating Layer Structure on Shear Property and Microstructure of Multilayer Electroplated Sn-3.5ag Solder Bumps

Qinghua Zhao,Anmin Hu,Ming Li,Jiangyan Sun

DOI: https://doi.org/10.1016/j.microrel.2012.08.010

2013-01-01

Abstract:In this paper, Sn-3.5Ag solder bumps were prepared using multilayer electroplating method. The effect of electroplating layer structure (Sn/Ag, Ag/Sn, Ag/Sn/Ag) on shear property and microstructure of solder bumps was investigated.Shear test revealed that Sn/Ag bumps displayed the highest shear strength among different electroplating layer structures, which was 89.3% higher than that of pure Sn bumps, and 43.5% higher than that of Ag/Sn bumps. The interfacial microstructure evolution during reflowing process was also observed. It was found that Cu6Sn5 intermetallic compound formed at the interface between solder and Cu and its grain size increased as reflow time increased for all three electroplating structures. When there was Ag electroplated between Sn and Cu (Ag/Sn/Ag and Ag/Sn structures), the morphology of Cu6Sn5 was thin, hexagonal and scattered, which could be attributed to the adsorption of Ag3Sn on the surface of Cu6Sn5. In contrast, when Sn was electroplated on Cu directly (Sn/Ag structure), the morphology of Cu6Sn5 was thick, rod-like and continuous, which displayed high shear strength. (C) 2012 Elsevier Ltd. All rights reserved.
Fabrication of Ni Microbumps With Small Feature Size on Au Using Electroless Ni Plating With Noncontact Induction

Yuxin Du,Zhen Song,Huizhong Zhu,Zheyao Wang

DOI: https://doi.org/10.1109/TCPMT.2015.2448683

2015-01-01

Abstract:This paper reports a method of fabrication for small-feature-sized nickel (Ni) microbumps on gold (Au) using a newly developed technique called electroless Ni plating with noncontact induction (ENPNI). This technique, differing from conventional electroless Ni plating with contact induction (ENPCI), which directly connects an active metal with an inactive metal to induce Ni electrochemical reaction, is characterized by separation of the active metal and the target metal. The mechanism of ENPNI is interpreted by employing the electric-double layer theory, and some phenomena are explained by the proposed mechanism. Ni microbumps with a diameter of 3-6 μm and a height of 3-4 μm have been successfully fabricated using ENPNI. The resistance of the Ni microbumps is measured, and yield and uniformity are evaluated. By breaking the restriction of contact, ENPNI has the advantages of no need for pretreatment and contact induction, allowing fabrication of microbumps with small feature sizes for applications in which direct contact of an active induction metal is impossible.
Research on the Interfacial Reaction and Mechanism of Cu/Sn/Ni Copper Pillar Bump

Li Rao,Fengtian Hu,Penghui Xu,Anmin Hu,Liming Gao,Ming Li,Wen Zhao

DOI: https://doi.org/10.1109/icept.2016.7583306

2016-01-01

Abstract:Copper pillar bump interconnect technology, with its good electrical properties and electromigration resistance, is becoming the next key technology for fine pitch interconnection of chips. The study of the effect of copper pillar bump size on the interfacial diffusion reaction has directive significance to the application of copper pillar bump. This paper focuses on the effect of size on the reliability of copper pillar bump. We use the multi-layer electroplating method to prepare Cu/Sn/Ni copper pillar bump sandwich structure with different diameters of Φ20μm and Φ100μm. We find that the reduction of bump size will promote the growth of interfacial intermetallic compound (IMC). A void growth model in the copper pillar bump is explored by investigating Kirkendall voids and the growth of IMC in Φ20μm Cu/20μmSn/Ni copper pillar bumps.
The shape evolution and application studies of electrodeposited bumps in electroforming

Huayu Gu,Hao Sun,Ying Xiong,Gang Liu,Xiang Wang

DOI: https://doi.org/10.1007/s10800-018-1203-5

IF: 2.925

2018-01-01

Journal of Applied Electrochemistry

Abstract:Deposition around the microvias opening is crucial for desirable quality of metallic micro components and micro bumps in electroforming. This paper presents a numerical and experimental study of shape evolution of electrodeposition front on the extent of over-plating. Computational models based on kinetics of the electrode reaction are used to simulate the entire deposition process from start of deposition until the formation of bumps. The effects of the current density and microstructure geometries are discussed through analyzing the current density distribution along the transient cathode surface. When the current density is 4 A dm −2 , the significant Ni craters are observed for microvias with diameters of 200 µm in the over-plating stage. The dent depths decrease as the current density and diameter decrease. For the 30 µm diameters, spherical structures in the over-plating stage form upon the photolithographic patterns for an applied current density of 1 A dm −2 . Furthermore, the spherical surfaces enable the fabrication of hemispherical lenses with various curvature radii. Graphical Abstract Spherical structures are obtained by electrodeposition into microcavities. A numerical and experimental study is carried out to study the mechanics of shape evolution. The polymeric microlenses are replicated through a combination of PDMS molding and UV curing. This process demonstrates the potential of this method in the fabrication of microlenses.
Microstructure Evolution, Interfacial Reaction and Mechanical Properties of Lead-Free Solder Bump Prepared by Induction Heating Method

Ming Yang,Shihua Yang,Hongjun Ji,Yong-Ho Ko,Chang-Woo Lee,Jianxin Wu,Mingyu Li

DOI: https://doi.org/10.1016/j.jmatprotec.2016.04.019

IF: 6.3

2016-01-01

Journal of Materials Processing Technology

Abstract:The formation process and mechanism of the Sn3.5Ag/Cu solder bump during induction heating were investigated to elucidate the basic characteristics of the induction heating soldering process. During induction heating, solder balls quickly melted from the surface to the center, which could be utilized to prepare solder bumps of controlled height. Cu6Sn5 grains with a round scallop shape were generated at the interface as soon as the solder ball was wetted on the Cu substrate. With prolonged heating time, the uniform morphology of the interfacial Cu6Sn5 grains was transformed to a special morphology in which scallop-shaped grains occupy the central area of the interface, surrounded by prismatic grains. Numerous bulk Cu6Sn5 grains were precipitated and regularly distributed in the solder matrix, which affected the hardness and shear strength of the solder bumps.
Tin Bumping for Wafer Level Lead-Free Packaging

Lei Nie,Jian Cai,Zhao Fang,Shuidi Wang

DOI: https://doi.org/10.1109/icept.2005.1564741

2005-01-01

Abstract:A pure tin bumping technology is described in this paper. TiW/Cu was used as under bump metallurgy. The pure tin was electroplated and formed solder bumps by reflow. The height of the solder bump is about 50 micron. SEM was used for observing the microstructure of interface, and the EDAX was used for investigating the composition of the intermetallic compounds. Tin and copper interreacted with each other to form intermetallic compounds, Cu6Sn5. Shear tests and thermal aging were used for evaluation of the tin solder bumps. The pure tin bumps were stored at 150°C for 1, 4, 9 and 16 days respectively. The composition of intermetallic compound changed as time going on. After several days of thermal aging, C3Sn formed between Cu and Cu6Sn5. The total thickness of intermetallic compound increased after thermal aging. The relationship between the thickness of intermetallic compound and the square root of aging time is linearity, implying that the growth of the IMC layer was diffusion controlled. Comparing the strength of tin solder bumps before and even after thermal aging, it was found that after 16 days of thermal aging, the shear strength of solder bump did not change obviously.

Fabrication of Pb/Sn Bumps

Fine Pitch and High Density Sn Bump Fabrication

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Formation of SnAg Solder Bump by Multilayer Electroplating

Fabrication and Formation Principle of Porous Cu-Sn Bumps for Metal Bonding in Chiplet Integration

Wetting behavior of electrolyte in fine pitch Cu/Sn bumping process by electroplating

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

Transient-Liquid-Phase Bonding of Granulated Cu–Sn Bumps with a 4-Μm Fine Pitch

Research of gold bump for wafer level package

Electroless Deposition of Nickel Microbumps for Fine-Pith Flip-Chip Bonding

Bonding of 5 Μm Cu-Sn Micro Bumps Using Thermal Reflow and Solid-State Pre-Bonding

A Sn3Ag–CoSn3 Composite Copper Pillar Bump for Three-Dimensional Packaging

The Evolution of Interfacial Microstructure of Sn3.5Ag Solder Bump with Cu Under-Bump Metallization

Electroless Deposition of 4 μm High Ni/Au Bumps for 8 μm Pitch Interconnection

Investigation of Interfacial Reaction Between Eutectic Sn–Pb Solder Droplet and Au/Ni/Cu Pad

Effect of Electroplating Layer Structure on Shear Property and Microstructure of Multilayer Electroplated Sn-3.5ag Solder Bumps

Fabrication of Ni Microbumps With Small Feature Size on Au Using Electroless Ni Plating With Noncontact Induction

Research on the Interfacial Reaction and Mechanism of Cu/Sn/Ni Copper Pillar Bump

The shape evolution and application studies of electrodeposited bumps in electroforming

Microstructure Evolution, Interfacial Reaction and Mechanical Properties of Lead-Free Solder Bump Prepared by Induction Heating Method

Tin Bumping for Wafer Level Lead-Free Packaging