Abstract:Heterogeneous integration (HI) and advanced packaging technology have been taken notice of semiconductor industry because it was believed as an alternative to overcome the slowing-down of Moore’s law, by splitting a chip into a few ones and then integrating them again. Especially, hybrid copper bonding (HCB) was considered an ideal methodology because it could integrate such chiplets having extremely high interconnect density. However, there were some difficulties like sensitive copper dishing and particle control, and those challenged a quick settlement of this promising technology. Therefore, it will be helpful to share these challenges by improving and extending micro-bump technology. This paper explored the thermal stability of newly applied micro-bump metallurgies with a noble flux-less bonding process to improve and extend conventional micro-bump technology. Micro-bumps of 14 μm pitch were electroplated on a 77 mm x 77 mm coupon silicon wafer, and Flux-Less Oxide-removal Laser Assembly, FLOLA is applied to interconnect 11 mm x 11 mm chips on a coupon. Before the bonding process, Ar/H2 atmospheric plasma pre-treatment was carried out to remove tin-oxide on the surface of SnAg solder and, there was neither fluxing nor cleaning. Underfill encapsulation followed and a high-temperature storage (HTS) test was carried out to verify diffusion behavior for 14 μm pitch micro-bumps. New metallurgy micro-bumps (M-SnAg), consisting of a new metal pillar (M) and diffusion barrier, showed superior thermal stability and much lower intermetallic compound (IMC) growth compared to both Cu-SnAg and Ni-SnAg bump, even after 2000hrs of iso-thermal aging at 180°C.

Research of gold bump for wafer level package

Design and Control of Horizontal Extension for Gold Bumping

Simulation and Optimization of Solution Flow in Fountain-Plating Cup for Au Bumping

Fabrication of Pb/Sn Bumps

Optimization of Micro-interconnection Distribution of Gold Stud Bumps for Thermo-sonic Flip Chip Bonding

Tin Bumping for Wafer Level Lead-Free Packaging

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

Fabrication of Ni Microbumps With Small Feature Size on Au Using Electroless Ni Plating With Noncontact Induction

Electroless Deposition of 4 μm High Ni/Au Bumps for 8 μm Pitch Interconnection

The Research on a Low Cost Flip Chip Bumping Process by Stencil Printing

Electromagnetic Shielding Analysis of Different Grounded Bump Distribution in SiP

Characterization of stencil printing parameters for fine pitch wafer bumping

Fabrication and Comparison of Bumpless Wafer-On-Wafer Integration and Bump-Containing Chip-On-Chip Integration

Method to Improve the Process Efficiency for Copper Pillar Electroplating

Influence of Under-Bump Metallurgy and Solder Alloys on the Crack in the Wafer Level Chip Scale Packaging

A Study on Improvement and Extension of Fine-Pitch Micro-Bump Interconnects Technology: New Metallurgy & Flux-Less Oxide-removal Laser Assembly (FLOLA)

Opening the Hole of the Backside Silicon and Forming the Alloy Bump For TSVs

Research on Au/Au micro-bump bonding for millimeter wave frequencies heterogeneous integration

The Analysis of Welding Process Parameter for Bump by Gold Wire Ball Bonding

Au-SN Flip-Chip Solder Bump for Microelectronic and Optoelectronic Applications