Abstract:This work focuses on the effect of Cu protrusion on the reliability of High Bandwidth Memory (HBM) fabricated by wafer-to-wafer hybrid bonding (W2W-HB) process. The thermal stress induced by large coefficient of thermal expansion (CTE) mismatch between different materials could seriously deteriorate the device performance, and even lead to failure. Different manufacturing and service conditions could greatly affect the microstructure and deformation behavior of the through silicon via (TSV). In this paper, a new process was designed to realize the self-compensation of the surface topology by rationally utilizing the dishing defects caused by CMP. The influence of dielectric materials (dielectric layer thickness and CTE) on Cu protrusion height was systematically explored. A finite element analysis (FEA) model was proposed to provide insight into the Cu protrusion mechanism under different operating conditions. Annealing tests were carried out to identify how the microstructure affects protrusion and to verify the accuracy of the model. During the test, the extruded TSV was observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Mechanisms of Cu protrusion in TSVs during heat treatment were analyzed, and possible factors involving thermal stress were discussed through the model. In addition, debonding risk was evaluated by comparing the peak interfacial peeling stress and the protrusion height for various scenarios. The conclusions can be used to understand and solve the key issues in the reliability challenges of HBM W2W-HB stacking process by enabling high-throughput TSV fabrication.

Opening the Hole of the Backside Silicon and Forming the Alloy Bump For TSVs

Sealing Bump With Bottom-Up Cu TSV Plating Fabrication in 3-D Integration Scheme

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

The Study of Backside Tsv Reveal Process by Direct Si/Cu Grinding and Polishing

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application

A TSV Last Integration Approach with Wafer Level Pre-Patterned Adhesive Bonding

CU seed, CMP process development and via resistance extraction in through silicon via technology

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Fabrication of Fine-Pitch Cu-Sn Microbumps Using Electroplating and Wet Seed Layer Etching

A Research Of The Micro-Damage Of The Backside Tsv Heterogeneous Microstructure After Cmp Process With Alkaline Slurry

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Copper-Based TSV: Interposer

Seed Layer Etching, Thermal Reflow and Bonding of Cu-Sn Micro Bumps with 5 Μm Diameters

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Development of Cu-less TSV reveal process using Si/Cu grinding, electroless Ni plating, and alkaline etching of Si

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

TSV Filling Technology using Cu Electrodeposition

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems