Abstract:Despite the fact that substantial research has been conducted on the through-silicon via (TSV) formation process during three-dimensional integration, there is still less understanding on the chemical mechanical planarization (CMP) process and post-CMP via dishing control mechanism in TSV fabrication. In this study, we investigated the synergistic effect of mechanical and chemical factors on the CMP performance of TSV, and analyzed the experimental results from different aspects. A high-resolution surface-profile-measuring instrument, combined with Scanning Electron Microscopy (SEM) and other measurements, was used to demonstrate the mechanism of non-uniformity and via dishing, and the experimental results indicate that via dishing and non-uniformity of wafers are strongly mitigated by combining high down force with low down force. Based on numerical analysis, it can be concluded that the solution of the via protrusion issue requires a sufficiently high hydrogen peroxide concentration in order to modify the removal rate selectivity of copper and barrier/oxide. The polishing time should be strictly controlled to prevent oversize dishing or protrusion. Moreover, material removal models for via dishing, based on several factors mentioned above, were established to elucidate the mechanism of via dishing/protrusion formation, and to illustrate the further optimization of the TSV–CMP process.

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Development of Cu-less TSV reveal process using Si/Cu grinding, electroless Ni plating, and alkaline etching of Si

The Study of Backside Tsv Reveal Process by Direct Si/Cu Grinding and Polishing

Fabrication and stacking of through-silicon-via array chip formed by notchless Si etching and wet cleaning of first metal layer

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

High speed Cu-Ni filling into TSV for 3-Dimensional Si chip stacking

Simultaneously performing interlayer copper interconnecting and TSV filling in stacked chips at room temperature based on copper electroplating

TSV CMP process optimization and dishing defect reduction

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Crosstalk Reduction in TSV Arrays with Direct Ohmic Contact Between Metal and Silicon-Substrate

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Copper-Based TSV: Interposer

A fast and CMP-free TSV process based on wafer-level liquid-metal injection for MEMS packaging