Abstract:Despite the fact that substantial research has been conducted on the through-silicon via (TSV) formation process during three-dimensional integration, there is still less understanding on the chemical mechanical planarization (CMP) process and post-CMP via dishing control mechanism in TSV fabrication. In this study, we investigated the synergistic effect of mechanical and chemical factors on the CMP performance of TSV, and analyzed the experimental results from different aspects. A high-resolution surface-profile-measuring instrument, combined with Scanning Electron Microscopy (SEM) and other measurements, was used to demonstrate the mechanism of non-uniformity and via dishing, and the experimental results indicate that via dishing and non-uniformity of wafers are strongly mitigated by combining high down force with low down force. Based on numerical analysis, it can be concluded that the solution of the via protrusion issue requires a sufficiently high hydrogen peroxide concentration in order to modify the removal rate selectivity of copper and barrier/oxide. The polishing time should be strictly controlled to prevent oversize dishing or protrusion. Moreover, material removal models for via dishing, based on several factors mentioned above, were established to elucidate the mechanism of via dishing/protrusion formation, and to illustrate the further optimization of the TSV–CMP process.

Development of Cu-less TSV reveal process using Si/Cu grinding, electroless Ni plating, and alkaline etching of Si

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Effect of leveler on microstructure and stress of electroplated copper for TSV application

The Study of Backside Tsv Reveal Process by Direct Si/Cu Grinding and Polishing

Low cost TSV fabrication technologies using anisotropic Si wet etching and conformal electroless plating of barrier and seed metals

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

CU seed, CMP process development and via resistance extraction in through silicon via technology

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Fully back-end TSV process by Cu electro-less plating for 3D smart sensor systems

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Impact of Bath Stability on Electroplated Cu for TSVs in a Controlled Environment

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization